Photoresist pattern shrinking composition and pattern shrinking method
Provided is a composition for shrinking a photoresist pattern, which is capable of shrinking a photoresist pattern using a photoresist during the fabrication of a semiconductor, and to a method of shrinking a pattern using the composition, whereby a pattern to be formed can be shrunken in a photoresist-patterning process, thus remarkably decreasing the number of steps of a semiconductor fabrication process and reducing the fabrication time and costs.
1. A composition for shrinking a photoresist pattern on a wafer, the composition comprising:
20 to 80 wt % of a pattern-shrinking material for shrinking the photoresist pattern on the wafer;
20 to 80 wt % of a solvent; and
0.01 to 2 wt % of a surfactant,
wherein the surfactant is polyoxyethylene nonylphenylether,
wherein the pattern-shrinking material is any one or a mixture of two or more selected from the group consisting of acetyl carbitol as a C1-C10 ketone-based solvent; ethylene glycol or triethylene glycol monoethylether as a C1-C10 ether-based solvent; and diethylene glycol monobutylether acetate as a C1-C10 ester-based solvent, and
wherein the solvent is 2-heptanol.
2. A method of shrinking a photoresist pattern on a wafer, the method comprising:
(1) dispensing a composition for shrinking the photoresist pattern on the photoresist pattern on the wafer;
(2) puddling for a predetermined period of time; and
(3) spin drying,
wherein the composition for shrinking the photoresist pattern comprises:
20 to 80 wt % of a pattern-shrinking material for shrinking the photoresist pattern on the wafer;
20 to 80 wt % of a solvent; and
0.01 to 2 wt % of a surfactant,
wherein the surfactant is polyoxyethylene nonylphenylether,
wherein the pattern-shrinking material is any one or a mixture of two or more selected from the group consisting of acetyl carbitol as a C1-C10 ketone-based solvent; ethylene glycol or triethylene glycol monoethylether as a C1-C10 ether-based solvent; and diethylene glycol monobutylether acetate as a C1-C10 ester-based solvent, and
wherein the solvent is 2-heptanol.
3. The method of claim 2 , wherein the puddling is performed for 20 to 120 seconds.