Ligand-modified quantum dot composition, ligand-modified quantum dot layer, preparation methods thereof, quantum dot light emitting diode
View Patent ↗A ligand-modified quantum dot composition, a ligand-modified quantum dot layer, preparation methods thereof, and a quantum dot light emitting diode are provided. Segment B of the ligand modifier in the ligand-modified quantum dot composition is a chain-cleavable segment, that is, segment B is a longer molecular chain, so that the material has good solubility and stability, thus the ligand-modified quantum dot composition is present in the form of a solution or ink, etc. Segment B itself is not very stable and may be cleaved under certain conditions. In specific applications, the group in segment B may be cleaved by heating or illumination, so that the ligand modifier becomes a short molecular chain ligand, thereby making the quantum dots densely stack and improving the carrier transfer performance.
1. A ligand-modified quantum dot composition comprising:
a quantum dot; and
a ligand modifier adsorbed on a surface of the quantum dot,
wherein the ligand modifier has a structural formula of segment A-segment B,
wherein the ligand modifier is adsorbed on the surface of the quantum dot by the segment A,
wherein the segment B is a chain-cleavable long molecular chain,
wherein the segment B includes an R1 group, an R2 group and an R3 group which are sequentially linked one by one, and the R1 group is linked to the segment A, and the R2 group is cleavable,
wherein the R2 group includes a group that is photodegraded or thermally degraded, and a chemical bond between the R2 group and the R1 group is broken under heating or illumination, and
wherein the R2 group is selected from a group consisting of a peroxy group (—O—O—) and a diacyl peroxide
2. The ligand-modified quantum dot composition according to claim 1 , wherein the quantum dot is selected from a group consisting of an III-V group quantum dot, an IV group quantum dot, an II-VI group quantum dot, a core-shell quantum dot, and an alloy quantum dot.
3. The ligand-modified quantum dot composition according to claim 2 , wherein the quantum dot is selected from a group consisting of CdS, CdSe, CdTe, ZnSe, InP, PbS, CuInS 2 , ZnO, CsPbCl 3 , C s PbBr 3 , CsPhI 3 , CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, InAs, InGaAs, InGaN, GaNk, ZnTe, Si, Ge, and C.
4. The ligand-modified quantum dot composition according to claim 1 , wherein the segment A is selected from a group consisting of an amino group, sulfhydryl, hydroxyl, a polyamino group, polysulfhydryl, polyhydroxyl, phosphorus, phosphorusoxy, organophosphorus, and thioether.
5. The ligand-modified quantum dot composition according to claim 1 , wherein a chemical bond between the R2 group and the R3 group is broken under heating or illumination.
6. The ligand-modified quantum dot composition according to claim 1 , wherein at least one of the R1 group and the R3 group is selected from a group consisting of an aromatic group, ethyl, butyl, cyclohexyl, methoxyl, a methylamino aliphatic chain, epoxypropyl, and a cyclohexyl alicyclic compound.
7. The ligand-modified quantum dot composition according to claim 6 , wherein the aromatic group is selected from a group consisting of phenyl, alkylphenyl, thienyl, pyrimidinyl, a phenylamino group, naphthalene, and phenoxyl.
8. A method for preparing a ligand-modified quantum dot layer, comprising:
forming the ligand-modified quantum dot composition according to claim 1 on a substrate; and
performing heating or illumination to form a ligand-modified quantum dot layer after the segment B of the ligand modifier is cleaved.
9. The method for preparing a ligand-modified quantum dot layer according to claim 8 ,
wherein the forming the ligand-modified quantum dot layer comprises adding a radical scavenger, and
wherein the radical scavenger is selected from a group consisting of alcohol, water, phenol, and thiol.
10. The method for preparing a ligand-modified quantum dot layer according to claim 8 , further comprising:
performing heating to separate a broken chain from the ligand-modified quantum dot layer after the forming of the ligand-modified quantum dot layer.
11. A ligand-modified quantum dot layer comprising the ligand-modified quantum dot composition according to claim 1 .
12. A quantum dot light emitting diode comprising the ligand modified quantum dot composition according to claim 1 .
13. A method for preparing a ligand-modified quantum dot composition, comprising:
synthesizing a first ligand-modified quantum dot in presence of a first ligand modifier in a solvent;
adding a second ligand modifier to the first ligand-modified quantum dot, wherein the second ligand modifier has a structural formula of segment A-segment B, wherein the segment B is a chain-cleavable long molecular chain, and wherein the second ligand modifier displaces the first ligand such that the segment A of the second ligand modifier is adsorbed on a surface of the quantum dot to obtain a second ligand-modified quantum dot; and
separating the second ligand-modified quantum dot from the first ligand,
wherein the segment B includes an R1 group, an R2 group and an R3 group which are sequentially linked one by one, and the R1 group is linked to the segment A, and the R2 group is cleavable,
wherein the R2 group includes a group that is photodegraded or thermally degraded, and a chemical bond between the R2 group and the R1 group is broken under heating or illumination, and
wherein the R2 group is selected from a group consisting of a peroxy group (—O—O—) and a diacyl peroxide
14. The method for preparing a ligand-modified quantum dot composition according to claim 13 ,
wherein the first ligand modifier includes oleic acid, and
wherein the solvent includes octadecylene.