Luminescence diode with first and second layer sequences having an arrangement of microprisms and method for producing the same
A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength λ dom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength λ dom2 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength λ dom1 of the first active layer and the second dominant wavelength λ dom2 of the second active layer are different from each other.
1. A luminescence diode comprising:
a carrier substrate;
a first semiconductor layer sequence comprising a first active layer configured to emit radiation having a first dominant wavelength λ dom1 ; and
a second semiconductor layer sequence comprising a second active layer configured to emit radiation having a second dominant wavelength λ dom2 ,
wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate,
wherein the first dominant wavelength λ dom1 of the first active layer and the second dominant wavelength λ dom2 of the second active layer are different from each other,
wherein the luminescence diode is configured to emit light in an infrared spectral region,
wherein both the first semiconductor layer sequence and the second semiconductor layer sequence comprise an arrangement of microprisms,
wherein the microprisms extend into a surface of the first semiconductor layer sequence facing the carrier substrate and into a surface of the second semiconductor layer sequence facing the carrier substrate, and
wherein a width of the microprisms decreases with an increasing distance from the carrier substrate in a cross-sectional view of the luminescence diode.
2. The luminescence diode according to claim 1 , wherein the first active layer and the second active layer each comprise an arsenide compound semiconductor material.
3. The luminescence diode according to claim 1 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are vertically offset from each other so as to have different vertical distances from the carrier substrate, and wherein the first semiconductor layer sequence and the second semiconductor layer sequence are connected to the carrier substrate by a solder layer which compensates for the different vertical distances.
4. The luminescence diode according to claim 1 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are electrically interconnected by a solder layer.
5. The luminescence diode according to claim 1 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are electrically contacted by a common bonding pad.
6. The luminescence diode according to claim 5 , and wherein the common bonding pad spans an intermediate space between the first and second semiconductor layer sequences.
7. The luminescence diode according to claim 1 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are connected in parallel.
8. The luminescence diode according to claim 1 , wherein the surface of the first semiconductor layer sequence facing the carrier substrate and the surface of the second semiconductor layer sequence facing the carrier substrate have different vertical distances from the carrier substrate.