Radiation-emitting semiconductor chip
A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.
1. A radiation-emitting semiconductor chip comprising:
a semiconductor body having an active region configured to generate radiation;
a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area;
a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip;
a current distribution layer electrically conductively connected to the first contact layer;
a connection layer electrically conductively connected to the first contact layer via the current distribution layer;
an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer; and
a dielectric mirror layer arranged in regions between the semiconductor body and the current distribution layer,
wherein the insulation layer has at least one opening, in which the connection layer and the current distribution layer adjoin one another, and
wherein a diameter of the openings is between 2 μm and 6 μm inclusive.
2. The radiation-emitting semiconductor chip according to claim 1 , wherein the dielectric mirror layer overlaps in places with the first contact layer and with the second contact layer in plan view of the radiation-emitting semiconductor chip.
3. The radiation-emitting semiconductor chip according to claim 1 , wherein the dielectric mirror layer is arranged in places between the semiconductor body and the second contact layer.
4. The radiation-emitting semiconductor chip according to claim 1 , wherein the dielectric mirror layer comprises a layer sequence composed of alternating sublayers having a higher refractive index and a lower refractive index.