IP Library Granted Patent US 10,818,860
Granted Patent B2
US 10,818,860 · App. 16/311,186 · Granted Oct 27, 2020

Quantum dot light emitting devices

Inventors: Anatoliy N Sokolov (Midland, MI); Brian Goodfellow (Midland, MI); Robert David Grigg (Midland, MI); Liam P Spencer (Lake Jackson, TX); John W Kramer (Midland, MI); David D Devore (Midland, MI); Sukrit Mukhopadhyay (Midland, MI); Peter Trefonas, III (Marlborough, MA)
Assignees: Rohm and Haas Electronic Materials LLC; Dow Global Technologies LLC
H01L51/502H01L51/0039H01L51/0003H01L51/0021H01L51/5056H01L51/5088H01L51/5206H01L51/5221H01L51/56H01L2251/301H01L2251/308H01L2251/556H01L2251/558
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Quick Facts
Patent No.
US 10,818,860
App. No.
16/311,186
Granted
Oct 27, 2020
Kind
B2
Abstract

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr 1 Ar 2 Ar 3 wherein Ar 1 , Ar 2 and Ar 3 independently are C 6 -C 50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.

Claims (10)

1. A quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I—III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, wherein the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, wherein the polymerizable groups are selected from an ethenyl group, trifluorovinylether, cinnamate or chalcone, diene, ethoxyethyne and 3-ethoxy-4-methylcyclobut-2-enone, b) an electroactive group with formula NAr 1 Ar 2 Ar 3 wherein Ar 1 , Ar 2 and Ar 3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.

2. The quantum dot light emitting device according to claim 1 , wherein the poly a molecular weight of at least 5,000, and no greater than 10,000,000.

3. The quantum dot light emitting device according to claim 1 , wherein the electroactive group having formula NAr 1 Ar 2 Ar 3 contains the followings:

4. The quantum dot light emitting device according to claim 1 , wherein the polymer further comprises a second monomer selected from

5. The quantum dot light emitting device according to claim 1 , wherein the linker group is selected from the group consisting of a covalent bond; —O—; -alkylene-; -arylene-; -alkylene-arylene-; -arylene-alkylene-; —O-alkylene-; —O-arylene-; —O— alkylene-arylene-; —O-alkylene-O—; —O-alkylene-O-alkylene-O—; —O-arylene-O—; —O— alkylene-arylene-O—; —O—(CH2CH2-O)n-, wherein n is an integer from 2 to 20; —O— alkylene-O-alkylene-; —O-alkylene-O-arylene-; —O-arylene-O—; —O-arylene-O-alkyene-; and —O-arylene-O-arylene.

6. The quantum dot light emitting device according to claim 1 , wherein the polymer further comprises a p-dopant.

7. The quantum dot light emitting device according to claim 1 , wherein the semiconductor nanoparticles are doped with rare earth elements, transition metal elements, or any combination thereof.

8. The quantum dot light emitting device according to claim 1 , wherein the semiconductor nanoparticles have a core-shell structure whereby an additional material is coated on the outside of an inner portion of the semiconductor nanoparticle, and the additional material is selected from the group consisting of Group IV compounds, Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group compounds, Group H—IV-VI compounds, Group II-IV-V compounds, or any combination thereof.

9. The quantum dot light emitting device according to claim 1 , wherein the semiconductor nanoparticles have at least one dimension 100 nanometers or less in length.

10. The quantum dot light emitting device according to claim 1 , wherein the semiconductor nanoparticles comprise a one-dimensional nanoparticle that has disposed at either or each end a single endcap or a plurality of endcaps that contact the one-dimensional nanoparticle.

Assignments (6)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Jun 9, 2025
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 071500/0678 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2022
From: SOKOLOV, ANATOLIY N.; GOODFELLOW, BRIAN; GRIGG, ROBERT DAVID; KRAMER, JOHN W.; DEVORE, DAVID D.; MUKHOPADHYAY, SUKRIT
To: DOW GLOBAL TECHNOLOGIES LLC
Reel/Frame 059580/0773 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2022
From: SPENCER, LIAM
To: DOW GLOBAL TECHNOLOGIES LLC
Reel/Frame 059580/0822 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2022
From: TREFONAS, PETER, III
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 059580/0838 →
Priority Claims (4)
WO PCT/CN2016/087409 · Jun 28, 2016 · international
WO PCT/CN2016/087413 · Jun 28, 2016 · international
WO PCT/CN2016/104856 · Nov 7, 2016 · international
WO PCT/CN2016/112579 · Dec 28, 2016 · international
Continuity (2)
Provisional Application 62417539 · Nov 4, 2016
Related Publication 20190334106A1 · Oct 31, 2019
Cited By (2)
US 12,618,005 US 12,716,025