Component with a thin-layer covering and method for its production

1. A component comprising:

a carrier;

a functional structure above the carrier;

a thin-layer covering spanning across the functional structure and resting above the carrier;

a planarization layer arranged above the thin-layer covering; and

a wiring level applied onto the planarization layer, wherein the wiring level comprises:

a structured conductor path electrically coupled to the functional structure via at least one through-connection, and

at least one solderable connecting pad arranged on the planarization layer.

2. The component according to claim 1 , wherein the functional structure is selected from the group consisting of a microelectromechanical system structure, a micro-acoustic structure, a surface acoustic wave (SAW) structure, a bulk acoustic wave (BAW) structure, and a guided bulk acoustic wave (GBAW) structure.

3. The component according to claim 1 , further comprising at least one connecting face arranged externally to the thin-layer covering on the carrier and coupled both to the functional structure and, via the at least one through-connection, to the wiring level.

4. The component according to claim 3 , in which the at least one connecting face and the at least one solderable connecting pad are at least one of

present in different numbers,

have a different distribution, or

are spaced horizontally from one another.

5. The component according to claim 1 , further comprising one or more circuit components on the planarization layer, wherein the one or more circuit components are coupled to the functional structure and selected from inductances, capacitances, and resistances.

6. The component according to claim 1 ,

in which a plurality of functional structures working with acoustic waves are respectively covered by a separate thin-layer covering and coupled to form a high frequency (HF) filter, and

in which the coupling of the plurality of functional structures to form the HF filter is at least partially realized in the wiring level.

7. The component of claim 1 , wherein the at least one through-connection comprises a material that is metalized.

8. The component of claim 1 , wherein the at least one through-connection constitutes a via and comprises metal.

9. A component comprising:

a carrier;

a functional structure above the carrier;

a thin-layer covering spanning across the functional structure and resting above the carrier, wherein:

the thin-layer covering comprises several partial layers,

the partial layers comprise a mechanically stable layer and a sealing layer, and

the mechanically stable layer encloses a cavity above the carrier, in which at least a portion of the functional structure is enclosed;

a planarization layer arranged above the thin-layer covering; and

a wiring level applied onto the planarization layer, wherein the wiring level comprises a structured conductor path electrically coupled to the functional structure via at least one through-connection.

10. A method for producing a component, the method comprising:

arranging a functional structure above a carrier;

covering the functional structure with a thin-layer covering which rests above the carrier;

producing and structuring a planarization layer arranged above the thin-layer covering;

producing a wiring level on the planarization layer, wherein the wiring level comprises a structured conductor path, and wherein:

a metal layer is deposited onto the planarization layer and structured in order to form the wiring level,

an electrically insulating layer is produced above the wiring level and structured such that exposed areas remain, and

a solderable metallization is applied onto the exposed areas in order to produce at least one solderable connecting pad; and

electrically coupling the structured conductor path to the functional structure via at least one through-connection.

11. The method according to claim 10 , wherein the planarization layer is either already applied in a planar manner by a planarizing method or applied as an arbitrary, even non-planar, layer and subsequently planarized, and wherein the planarization layer comprises a lacquer, a polymer, or another organic material.

12. The method according to claim 10 , in which producing the wiring level comprises producing two metallic partial layers, of which a first one is applied onto an entire surface as a growth layer, wherein a structure of the wiring level is defined by utilizing a photoresist, and wherein a second metallic partial layer is applied as a layer thickness reinforcement of the growth layer in areas free of the photoresist, in which the growth layer is removed in areas next to the structure of the wiring level.

13. The method according to claim 10 , in which the at least one solderable connecting pad is produced by applying a solderable metal layer onto corresponding areas of the wiring level, wherein definition of the at least one solderable connecting pad takes place by utilizing photolithography.