Oxide semiconductor film and method for producing same
A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.
1. A semiconductor device comprising:
a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table; and
an electrode arranged on at least one of the p-type semiconductor layer or the n-type semiconductor layer,
wherein the p-type semiconductor layer has a p-type carrier concentration of 1×10 15 /cm 3 or more,
wherein the p-type semiconductor layer has a hole mobility of 1 cm 2 /Vs or more, and
wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
2. The semiconductor device according to claim 1 , wherein the metal of Group 9 includes rhodium, iridium, or cobalt.
3. The semiconductor device according to claim 1 , wherein the metal of Group 13 includes at least one metal selected from among indium, aluminum, and gallium.
4. The semiconductor device according to claim 1 , wherein the p-type semiconductor layer includes a magnesium dopant.
5. The semiconductor device according to claim 1 , wherein the p-type semiconductor layer is a thermoelectric conversion element.
6. The semiconductor device according to claim 1 , wherein the p-type semiconductor layer and the n-type semiconductor layer include a mixed crystal.
7. A semiconductor system comprising:
the semiconductor device according to claim 1 .
8. A semiconductor device comprising:
a light-emitting layer having a first surface and a second surface;
a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table positioned on the first surface of the light-emitting layer; and
an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table positioned on the second surface of the light-emitting layer,
wherein the p-type semiconductor layer has a p-type carrier concentration of 1×10 15 /cm 3 or more,
wherein the p-type semiconductor layer has a hole mobility of 1 cm 2 /Vs or more, and
wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
9. A semiconductor device comprising:
a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table;
a first electrode formed on the p-type semiconductor layer; and
a second electrode formed on the n-type semiconductor layer,
wherein the p-type semiconductor layer has a p-type carrier concentration of 1×10 15 /cm 3 or more,
wherein the p-type semiconductor layer has a hole mobility of 1 cm 2 /Vs or more, and
wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
10. A semiconductor device comprising:
a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table; and
an electrode arranged on at least one of the p-type semiconductor layer or the n-type semiconductor layer,
wherein the p-type semiconductor layer has a hole mobility of 1 cm2/Vs or more, and
wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
11. A method of manufacturing an oxide semiconductor device, the method comprising:
generating atomized droplets for a p-type semiconductor layer by atomizing a raw material solution comprising a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
generating atomized droplets for an n-type semiconductor layer by atomizing a raw material solution comprising a metal of Group 13 of the periodic table;
carrying the atomized droplets onto a surface of a base by using a carrier gas; and
causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the oxide semiconductor layer on the base.
12. The method according to claim 11 , wherein the metal of Group 9 includes rhodium, iridium, or cobalt.
13. The method according to claim 11 , wherein the metal of Group 13 includes at least one metal selected from among indium, aluminum, and gallium.
14. The method according to claim 11 , wherein the p-type semiconductor layer includes a magnesium dopant.