P-type oxide semiconductor and method for manufacturing same
A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
1. A semiconductor device comprising:
a p-type semiconductor layer comprising, as a first major component, a metal oxide, the metal oxide being a mixed crystal of an oxide of a Group 9 metal in a periodic table and gallium oxide;
an n-type semiconductor layer provided on the p-type semiconductor layer, the n-type semiconductor layer comprising, as a second major component, a crystalline oxide semiconductor that comprises at least gallium; and
an electrode; wherein the mixed crystal has a corundum structure; wherein the crystalline oxide semiconductor has a corundum structure.
2. The semiconductor device according to claim 1 , wherein the Group 9 metal is 10% or more in atomic ratio in the metal oxide except oxygen of the metal oxide.
3. A semiconductor system comprising:
the semiconductor device according to claim 2 .
4. The semiconductor device according to claim 1 , wherein the gallium is 5% or more in atomic ratio in the metal oxide except oxygen of the metal oxide.
5. A semiconductor system comprising:
the semiconductor device according to claim 4 .
6. A semiconductor system comprising:
the semiconductor device according to claim 1 .