Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device

1. An oxide sintered material including an In 2 O 3 crystal phase, a Zn 4 In 2 O 7 crystal phase and a ZnWO 4 crystal phase, wherein

a diffraction angle 2θ at the X-ray diffraction peak derived from the In 2 O 3 crystal phase is greater than 50.70° and smaller than 51.04°.

2. The oxide sintered material according to claim 1 , wherein

the content of the In 2 O 3 crystal phase is 25 mass % or more and less than 98 mass %, and the content of the Zn 4 In 2 O 7 crystal phase is 1 mass % or more and less than 50 mass %.

3. The oxide sintered material according to claim 1 , wherein

the lattice constant of a C-plane of the Zn 4 In 2 O 7 crystal phase is 33.53 Å or more and 34.00 Å or less.

4. The oxide sintered material according to claim 1 , wherein

the content of the ZnWO 4 crystal phase is 0.1 mass % or more and less than 10 mass %.

5. The oxide sintered material according to claim 1 , wherein

the content of tungsten relative to the total of indium, tungsten and zinc in the oxide sintered material is more than 0.1 atom % and less than 20 atom %, and

the content of zinc relative to the total of indium, tungsten and zinc in the oxide sintered material is more than 1.2 atom % and less than 40 atom %.

6. The oxide sintered material according to claim 1 , wherein

the content of zinc relative to the content of tungsten in the oxide sintered material is greater than 1 and less than 80 by atom ratio.

7. The oxide sintered material according to claim 1 , further comprising zirconium, wherein

the content of zirconium relative to the total of indium, tungsten, zinc and zirconium in the oxide sintered material is 0.1 ppm or more and 200 ppm or less by atom ratio.

8. A sputtering target comprising the oxide sintered material according to claim 1 .

9. A method of manufacturing a semiconductor device including an oxide semiconductor film, comprising:

preparing the sputtering target according to claim 8 ; and

forming the oxide semiconductor film by a sputtering method using the sputtering target.

10. A method of producing an oxide sintered material according to claim 1 , comprising:

forming the oxide sintered material by sintering a molded body containing indium, tungsten and zinc,

forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer.

11. The method of producing an oxide sintered material according to claim 10 , wherein

forming the oxide sintered material includes placing the molded body at the first temperature for 30 minutes or longer, and placing the molded body in an oxygen-containing atmosphere at a second temperature which is 800° C. or more and less than 1200° C. and higher than the first temperature in this order.

12. A method of producing an oxide sintered material according to claim 1 , comprising:

preparing a primary mixture of a zinc oxide powder and an indium oxide powder;

forming a calcined powder by heat-treating the primary mixture;

preparing a secondary mixture of raw powders including the calcined powder;

forming a molded body by molding the secondary mixture; and

forming the oxide sintered material by sintering the molded body,

forming the calcined powder including forming a complex oxide powder including zinc and tungsten as the calcined powder by heat-treating the primary mixture at a temperature of 550° C. or more and less than 1300° C. in an oxygen-containing atmosphere.

13. The method of producing an oxide sintered material according to claim 12 , wherein

forming the oxide sintered material includes placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer.

14. The method of producing an oxide sintered material according to claim 13 ,

forming the oxide sintered material includes placing the molded body at the first temperature for 30 minutes or longer, and placing the molded body in an oxygen-containing atmosphere at a second temperature which is selected from a temperature range of 800° C. or more and less than 1200° C. and higher than the first temperature in this order.