Optoelectronic semiconductor body and light emitting diode
An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.
1. An optoelectronic semiconductor body comprising:
an active region comprising a quantum well that generates electromagnetic radiation,
a first region that impedes passage of charge carriers from the active region,
a second region that impedes passage of charge carriers from the active region, and
an intermediate region arranged between the first region and the second region, wherein
the semiconductor body is based on a nitride compound semiconductor material,
the first region is directly adjacent to the active region on a p-side,
the second region is arranged on a side of the first region facing away from the active region,
the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region,
the first region and the second region contain aluminium,
the intermediate region has an electronic band gap larger than the electronic band gap of the quantum well and smaller than the electronic band gaps of the first region and of the second region, and the intermediate region is at least partially free of aluminium,
the intermediate region has at least two subregions that differ from one another in terms of their material composition and electronic band gap,
at least one of the subregions is free of aluminium,
the second region is p-doped, and
the first region and the intermediate region are n-doped.
2. The optoelectronic semiconductor body according to claim 1 , wherein the intermediate region directly adjoins the first region and directly adjoins the second region.
3. The optoelectronic semiconductor body according to claim 1 , wherein directly adjoining subregions differ from one another with regard to their band gap.
4. The optoelectronic semiconductor body according to claim 1 , wherein the second region has an aluminum concentration greater than the aluminum concentration in the first region.
5. The optoelectronic semiconductor body according to claim 1 , wherein the first region and, if present, the intermediate region are nominally undoped.
6. A light-emitting diode comprising:
the semiconductor body according to claim 1 , and
electrical connection points for contacting the semiconductor body, wherein
the light-emitting diode emits electromagnetic radiation having a peak wavelength of less than 480 nm.