Component having semiconductor bodies electrically conductively connected via a transition zone
A component includes a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength, in the vertical direction, the first transition zone is arranged between the first and second semiconductor bodies and is directly adjacent to the first and second semiconductor bodies, the first transition zone includes a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and the first transition zone includes a structured surface or a first partially transparent and partially wavelength-selectively reflective mirror structure.
1. A component comprising a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein
the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength,
in the vertical direction, the first transition zone is arranged between the first semiconductor body and the second semiconductor body and is directly adjacent to the first semiconductor body and directly adjacent to the second semiconductor body,
the first transition zone comprises a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and
the first transition zone comprises a first partially transparent and partially wavelength-selectively reflective mirror structure, wherein
the first mirror structure comprises alternately disposed first layers and second layers,
the first layers are formed from a radiation-transmissive and electrically conductive material, and
the first mirror structure has a plurality of through-contacts extending vertically throughout the first layers and the second layers, the through-contacts being formed from an electrically conductive material.
2. The component according to claim 1 , wherein the first transition zone is free of an adhesion-promoting material or free of a bonding layer.
3. The component according to claim 1 , wherein the first transition zone has an inner planar interface between a first terminal layer and a second terminal layer, and
the first terminal layer and/or the second terminal layer of the first transition zone are/is formed from the radiation-transmissive and electrically conductive material, and
the inner interface surface is free of a bonding material and formed by planar connecting surfaces of the terminal layers.
4. The component according to claim 1 , wherein the first transition zone comprises a first terminal layer and further comprises a structured main surface having first decoupling structures, and the first terminal layer is applied directly onto a structured main surface of the first semiconductor body so that the first terminal layer has the main surface facing the first semiconductor body and has an inverted structure of the main surface of the first semiconductor body.
5. The component according to claim 1 , wherein the first mirror structure is formed such that it acts as a dichroic mirror transmitting electromagnetic radiation of the first peak wavelength and scatters or reflects electromagnetic radiation of the second peak wavelength.
6. The component according to claim 1 , wherein the first layers have a refractive index that differs from a refractive index of the second layers by at least 0.3.
7. The component according to claim 1 , further comprising a third semiconductor body comprising a third optically active layer that generates electromagnetic radiation of a third peak wavelength, wherein the second semiconductor body is arranged between the first semiconductor body and the third semiconductor body, and the second semiconductor body mechanically and electrically connects to the third semiconductor body via a second transition zone.
8. A component comprising a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein
the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength,
in the vertical direction, the first transition zone is arranged between the first semiconductor body and the second semiconductor body and is directly adjacent to the first semiconductor body and directly adjacent to the second semiconductor body,
the first transition zone comprises a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and
the first transition zone comprises a structured main surface or a first partially transparent and partially wavelength-selectively reflective mirror structure,
wherein the component further comprises a third semiconductor body comprising a third optically active layer that generates electromagnetic radiation of a third peak wavelength,
the second semiconductor body is arranged between the first semiconductor body and the third semiconductor body,
the second semiconductor body mechanically and electrically connects to the third semiconductor body via a second transition zone, and
the second transition zone comprises a structured main surface having second decoupling structures, and the second decoupling structures have an average lateral width less than the second peak wavelength and greater than the third peak wavelength.
9. The component according to claim 8 , wherein the second transition zone has a second mirror structure that is partially transparent and partially wavelength-selectively reflective and transmits electromagnetic radiation of the first and second peak wavelengths and scatters or at least partially reflects electromagnetic radiation of the third peak wavelengths.
10. A component comprising a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein
the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength,
in the vertical direction, the first transition zone is arranged between the first semiconductor body and the second semiconductor body and is directly adjacent to the first semiconductor body and directly adjacent to the second semiconductor body,
the first transition zone comprises a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and
the first transition zone comprises a structured main surface having first decoupling structures,
wherein the component further comprises a third semiconductor body comprising a third optically active layer that generates electromagnetic radiation of a third peak wavelength,
the second semiconductor body is arranged between the first semiconductor body and the third semiconductor body,
the second semiconductor body mechanically and electrically connects to the third semiconductor body via a second transition zone,
the first peak wavelength is assigned to a red spectral range,
the second peak wavelength is assigned to a green spectral range,
the third peak wavelength is assigned to a blue spectral range, and
the second transition zone has a structured main surface comprising second decoupling structures having smaller lateral widths compared to the first decoupling structures of the structured main surface of the first transition zone.
11. The component according to claim 8 , wherein the first transition zone comprises the first partially transparent and partially wavelength-selectively reflective mirror structure,
the second transition zone has a second partially transparent and partially wavelength-selectively reflective mirror structure, and regarding the wavelength selectivity, the second mirror structure is different from the first mirror structure.
12. The component according to claim 11 ,
wherein the first mirror structure and the second mirror structure are each formed as Bragg mirrors comprising a plurality of alternately disposed first layers and second layers, and
the first layers of the first mirror structure and the first layers of the second mirror structure are each formed from a radiation-transmissive and electrically conductive material, and
the second layers of the first mirror structure and the second layers of the second mirror structure differ from each other with respect to their layer thicknesses and/or their materials.
13. The component according to claim 1 , wherein the radiation-transmissive and electrically conductive material of the transition zone is a transparent electrically conductive oxide.
14. The component according to claim 1 , wherein the first mirror structure is formed such that it transmits electromagnetic radiation of the first peak wavelength and scatters or partially reflects electromagnetic radiation of the second peak wavelength.