Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment, a chip includes a semiconductor body comprising a plurality of emission regions, first and second contact points, a rewiring structure and first and second connection points, wherein each emission region is contacted via the first and second contact points and configured to be operated separately from one another, wherein the rewiring structure electrically conductively connects each first contact point to an associated first connection point, wherein the rewiring structure electrically conductively connects every second contact point to an associated second connection point, wherein at least one of the connection points does not overlap with a contact point which is electrically conductively connected to this connection point in a vertical direction, and wherein each first connection point is disposed laterally directly adjacent to a further first connection point.
1. A method for producing an optoelectronic semiconductor chip wherein the optoelectronic semiconductor chip comprises a semiconductor body having a plurality of emission regions arranged laterally next to one another, a plurality of first and second contact points, a rewiring structure and a plurality of first connection points and at least one second connection point, wherein each emission region is contacted in an electrically conductive manner via a first contact point and a second contact point, wherein the emission regions are configured to be operated separately from one another, wherein the rewiring structure electrically conductively connects each first contact point to an associated first connection point, wherein the rewiring structure electrically conductively connects every second contact point to an associated second connection point, wherein at least one of the connection points does not overlap with a contact point electrically conductively connected to this connection point in a vertical direction, wherein a plurality of second contact points is electrically conductively connected to a common second connection point, wherein each first connection point of the plurality of first connection points is disposed laterally directly adjacent to another first connection point of the plurality of first connection points, wherein the first connection points and the second connection point are configured to be at different electrical potential during operation, wherein the rewiring structure comprises rewirings of a first type, and wherein the rewirings of the first type each electrically conductively connects exactly one first contact point to exactly one first connection point, the method comprising:
providing the semiconductor body, wherein the semiconductor body comprises exposed first contact points and exposed second contact points arranged on a main surface of the semiconductor body, and wherein the individual emission regions of the semiconductor body are produced in a common epitaxy process such that the emission regions are part of a common semiconductor body;
applying the rewiring structure on the main surface of the semiconductor body, on which the first and second contact points are arranged; and
applying the first and second connection points on a side of the rewiring structure facing away from the semiconductor body, wherein an area of at least one of the first contact points is smaller than an area of the first connection point.
2. The method according to claim 1 , wherein the rewiring structure is formed on the semiconductor body.
3. The method according to claim 1 , wherein an area of at least one first contact point is smaller than an area of the first connection points.