Metal oxide nanoparticles as fillable hardmask materials
A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.
1. A dielectric composition comprising:
a metal oxide particle comprising a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio, wherein ones of the organic ligand are bonded directly to metal atoms of the metal oxide particle by a carbon-metal bond, and others of the organic ligand are bonded directly to oxygen atoms of the metal oxide particle, the oxygen atoms directly bonded to corresponding metal atoms of the metal oxide particle, and wherein the metal oxide particle comprises one or more metal-oxygen-metal-oxygen-metal-oxygen six-membered rings.
2. The dielectric composition of claim 1 , wherein the metal oxide particle comprises a metal selected from hafnium, zirconium, titanium, aluminum and tin.
3. The dielectric composition of claim 1 , wherein the organic ligand comprises a carbonyl group, C(O).
4. The dielectric composition of claim 3 , wherein the organic ligand comprises the formula, —C(O)R, wherein R is C1-C10.
5. The dielectric composition of claim 1 , further comprising a casting solvent, wherein the metal oxide particle is dispersed in the casting solvent.
6. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a dielectric composition comprising:
a metal oxide particle comprising a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio, wherein ones of the organic ligand are bonded directly to metal atoms of the metal oxide particle by a carbon-metal bond, and others of the organic ligand are bonded directly to oxygen atoms of the metal oxide particle, the oxygen atoms directly bonded to corresponding metal atoms of the metal oxide particle, and wherein the metal oxide particle comprises one or more metal-oxygen-metal-oxygen-metal-oxygen six-membered rings.
7. The computing device of claim 6 , further comprising:
a memory coupled to the board.
8. The computing device of claim 6 , further comprising:
a communication chip coupled to the board.
9. The computing device of claim 6 , further comprising:
a camera coupled to the board.
10. The computing device of claim 6 , further comprising:
a battery coupled to the board.
11. The computing device of claim 6 , further comprising:
an antenna coupled to the board.
12. The computing device of claim 6 , wherein the component is a packaged integrated circuit die.
13. The computing device of claim 6 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
14. The computing device of claim 6 , wherein the computing device is selected from the group consisting of a mobile phone, a laptop, a desk top computer, a server, and a set-top box.