Semiconductor substrate
A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×10 21 (atoms/cm 3 ) or more of particular atoms.
1. A semiconductor substrate comprising:
a single-crystalline SiC substrate; and
a polycrystalline SiC substrate,
wherein
the single-crystalline SiC substrate and the polycrystalline SiC substrate are bonded via an interface layer,
the interface layer is a composite material containing carbon and silicon,
the interface layer contains 1×10 21 (atoms/cm 3 ) or more of silicon (Si) atoms, and
in an element composition ratio in the composite material, a ratio of silicon is more than that of carbon.
2. The semiconductor substrate according to claim 1 , wherein
a thickness of the interface layer is equal to or more than 0.25 nanometer.
3. The semiconductor substrate according to claim 1 , wherein
the interface layer is a composite material containing carbon, silicon, and nitrogen.
4. The semiconductor substrate according to claim 1 , wherein
the interface layer is a composite material containing carbon, silicon, and phosphorus.
5. The semiconductor substrate according to claim 1 , wherein
the interface layer contains 1×10 22 (atoms/cm 3 ) or more of the silicon atoms.
6. The semiconductor substrate according to claim 1 , wherein
in an element composition ratio in the interface layer, a ratio of the silicon atoms is 10 (atomic %) or more.
7. The semiconductor substrate according to claim 1 , wherein
the single-crystalline SiC substrate is 4H—SiC.
8. The semiconductor substrate according to claim 1 , wherein
the polycrystalline SiC substrate is 3C—SiC.
9. A semiconductor substrate comprising:
a single-crystalline SiC substrate; and
a polycrystalline SiC substrate,
wherein
the single-crystalline SiC substrate and the polycrystalline SiC substrate are bonded via an interface layer,
the interface layer is a composite material containing carbon and silicon,
the interface layer contains 1×10 21 (atoms/cm 3 ) or more of carbon (C) atoms, and
in an element composition ratio in the composite material, a ratio of carbon is more than that of silicon.
10. The semiconductor substrate according to claim 9 , wherein
a thickness of the interface layer is equal to or more than 0.25 nanometer.
11. The semiconductor substrate according to claim 9 , wherein
the interface layer is a composite material containing carbon, silicon, and nitrogen.
12. The semiconductor substrate according to claim 9 , wherein
the interface layer is a composite material containing carbon, silicon, and phosphorus.
13. The semiconductor substrate according to claim 9 , wherein
the interface layer contains 1×10 22 (atoms/cm 3 ) or more of the carbon atoms.
14. The semiconductor substrate according to claim 9 , wherein
in an element composition ratio in the interface layer, a ratio of the carbon atoms is 10 (atomic %) or more.
15. The semiconductor substrate according to claim 9 , wherein
the single-crystalline SiC substrate is 4H—SiC.
16. The semiconductor substrate according to claim 9 , wherein
the polycrystalline SiC substrate is 3C—SiC.