Granted Patent B2

US 12,431,440 · App. 17/445,505 · Granted Sep 30, 2025

Inventors: Kiyoshi Matsushima (Nagoya, JP); Jun Yoshikawa (Nagoya, JP); Morimichi Watanabe (Nagoya, JP); Risa Miyakaze (Nagoya, JP)

Assignee: NGK INSULATORS, LTD.

H01L23/562H10D62/405H10D62/53H10D62/8325

Abstract

Claims (12)

1. A SIC composite substrate comprising:

a biaxially-oriented SiC layer in which SIC is oriented in both a c-axis direction and an a-axis direction; and

a SIC polycrystalline layer provided on one surface of the biaxially-oriented SIC layer,

wherein pores are present in the SiC composite substrate.

2. The SiC composite substrate according to claim 1 , wherein pores are present in the SIC polycrystalline layer.

3. The SIC composite substrate according to claim 2 , wherein pores are also present in the biaxially-oriented SIC layer.

4. The SiC composite substrate according to claim 3 , wherein the number of the pores per 1 cm 2 of a unit cross-sectional area in the SIC polycrystalline layer is greater than the number of the pores per 1 cm 2 of a unit cross-sectional area in the biaxially-oriented SIC layer.

5. The SiC composite substrate according to claim 1 , wherein pores are absent in the biaxially-oriented SIC layer.

6. The SIC composite substrate according to claim 1 , wherein the biaxially-oriented SiC layer has a defect density of 1.0×10 1 /cm 2 or less.

7. A composite substrate for a semiconductor device comprising:

the SIC composite substrate according to claim 1 ; and

a functional layer for a semiconductor device provided on the biaxially-oriented SiC layer of the SIC composite substrate.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (20)