Composite substrate, method for forming nanocarbon film, and nanocarbon film
Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1μm or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layer 13 which has a thickness of 1μm or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.
1. A composite substrate, comprising:
a single-crystal silicon carbide thin film having a thickness of not more than 1 μm,
a handle substrate which supports the single-crystal silicon carbide thin film and is made of a heat-resistant material (exclusive of single-crystal silicon carbide) that is heat resistant to at least 1,100° C., and
an intervening layer having a thickness of at least 2 nm and not more than 1 nm that is provided between the single-crystal silicon carbide thin film and the handle substrate and is made of at least one metallic material selected from the group consisting of titanium, gold, silver, copper, cobalt, iron, chromium, zirconium, molybdenum, tantalum and tungsten.
2. The composite substrate of claim 1 , wherein the handle substrate is made of amorphous silicon carbide, polycrystalline silicon carbide, quartz glass, sapphire, silicon nitride, aluminum nitride, silicon or diamond.
3. The composite substrate of claim 1 , wherein the single-crystal silicon carbide thin film is an exfoliation-transferred film of single-crystal silicon carbide.
4. The composite substrate of claim 1 , wherein the single-crystal silicon carbide thin film has a thickness of at least 200 nm and not more than 800 nm.
5. The composite substrate of claim 1 , wherein the intervening layer has a thickness of at least 0.02 μm and not more than 0.5 μm.
6. The composite substrate of claim 1 , wherein the intervening layer is (i) a single layer of titanium, (ii) a single layer of zirconium, (iii) multiple layers consisting of a titanium layer and a gold layer, or (iv) multiple layers consisting of a zirconium layer and a gold layer.
7. The composite substrate of claim 1 , further comprising a nanocarbon film in the surface side of the single-crystal silicon carbide thin film.
8. The composite substrate of claim 7 , wherein the nanocarbon film is a film in which silicon atoms are sublimated from the single-crystal silicon carbide thin film.
9. The composite substrate of claim 7 , wherein the nanocarbon film comprises a nanocarbon selected from the group consisting of fullerenes, graphenes, carbon nanotubes, and a mixture of two or more of fullerenes, graphenes and carbon nanotubes.
10. The composite substrate of claim 7 , wherein the number of defects found by surface examination of the nanocarbon film under an optical microscope at 1,000× is not more than 4,000 defects/cm 2 .
11. A method of forming a nanocarbon film, comprising the step of heating the composite substrate of claim 1 and thereby sublimating silicon atoms from the single-crystal silicon carbide thin film so as to obtain a nanocarbon film.