Optoelectronic semiconductor chip
An optoelectronic semiconductor chip includes a plurality of core-shell rods that generate electromagnetic radiation spaced apart from each other; a first electrically conductive contact structure for n-side electrical contacting of the core-shell rods; and a second electrically conductive contact structure for p-side electrical contacting of the core-shell rods, wherein the first electrically conductive contact structure and the second electrically conductive contact structure overlap at least in sections in a vertical direction, the optoelectronic semiconductor chip is surface mountable on a mounting side, and at least a partial region of the two electrically conductive contact structures extends through a breakthrough through at least one layer of the optoelectronic semiconductor chip.
1. An optoelectronic semiconductor chip comprising:
a plurality of core-shell rods that generate electromagnetic radiation spaced apart from each other;
a first electrically conductive contact structure for n-side electrical contacting of said core-shell rods; and
a second electrically conductive contact structure for p-side electrical contacting of the core-shell rods, wherein
the first electrically conductive contact structure and the second electrically conductive contact structure overlap at least in sections in a vertical direction,
the optoelectronic semiconductor chip is surface mountable on a mounting side, and
at least a partial region of each of the two electrically conductive contact structures extends through a breakthrough through at least one layer of the optoelectronic semiconductor chip.
2. The optoelectronic semiconductor chip according to claim 1 , wherein at least a majority of the core-shell rods each comprise
a main extension direction,
a core region formed with a first n-type semiconductor material,
an active layer that generates electromagnetic radiation that covers the core region at least in directions transverse to the main extension direction,
a cover layer formed with a second p-type semiconductor material and covering the active layer at least in directions transverse to the main extension direction, wherein
the core region of the majority of the core-shell rods is electrically contacted by the first electrically conductive contact structure, and
the cover layer of the majority of the core-shell rods is electrically contacted by the second electrically conductive contact structure.
3. The optoelectronic semiconductor chip according to claim 1 , wherein
the second electrically conductive contact structure has a current expansion layer covering at least a majority of the core-shell rods at least in directions transverse to a main extension direction of the core-shell rods, the current expansion layer being transparent to electromagnetic radiation generated in use in the core-shell rods, and
a first insulation material is disposed between the plurality of core-shell rods, the first insulation material being transparent to electromagnetic radiation generated in use in the core-shell rods, the first insulation material surrounding the core-shell rods at least in directions transverse to the main extension direction, and the first insulation material adjoining the current expansion layer at least in places.
4. The optoelectronic semiconductor chip according to claim 3 , wherein the optoelectronic semiconductor chip is free of a growth substrate.
5. The optoelectronic semiconductor chip according to claim 1 , wherein
a second insulating material is disposed between said plurality of core-shell rods, and
the first insulation material is applied to a side of the second insulation material facing away from the first contact structure on the second insulation material.
6. The optoelectronic semiconductor chip according to claim 1 , wherein a first insulating material is disposed between said plurality of core-shell rods, and said first insulating material projects beyond the core-shell rods and the first and second electrically conductive contact structures in lateral directions.
7. The optoelectronic semiconductor chip according to claim 1 , wherein
the core-shell rods are partially surrounded by a first insulating material such that an upper side of the core-shell rods, on a side of the core-shell rods facing away from the first electrically conductive contact structure, is at least partially free of the first insulating material,
an electrically conductive second terminal layer of the second electrically conductive contact structure electrically contacts a plurality of the core-shell rods at their top-side,
the optoelectronic semiconductor chip is free of a growth substrate,
a portion of said first electrically conductive contact structure extends through a breakthrough through at least one layer of said optoelectronic semiconductor chip,
a first electrically conductive layer is arranged on the side of the core-shell rods facing away from the mounting side of the optoelectronic semiconductor chip, and
the core-shell rods are electrically contacted on the n-sides via the first electrically conductive layer, the first electrically conductive layer being transparent to electromagnetic radiation generated during operation of the core-shell rods.
8. The optoelectronic semiconductor chip according to claim 7 , wherein the first insulating material has an increasing optical refractive index in the direction of the second terminal layer.
9. The optoelectronic semiconductor chip according to claim 7 , wherein at least one of the following three layers is reflective to electromagnetic radiation generated in the core-shell rods: the first insulating material, the second terminal layer, and an insulating layer disposed between the first and second electrically conductive contact structures.
10. The optoelectronic semiconductor chip according to claim 7 , wherein said first electrically conductive layer comprises gallium nitride and graphene.