Garnet compound, sintered body and sputtering target containing same
A garnet compound represented by a general formula (I): Ln 3 In 2 Ga 3-X Al X O 12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).
1. A sputtering target, comprising a oxide sintered body, comprising:
a garnet phase represented by a general formula (I):
Ln 3 In 2 Ga 3-X Al X O 12 (I)
wherein,
Ln represents one or more metal elements selected from Nd and Sm satisfies an expression 0≤X<3, and
a bixbyite phase represented by In 2 O 3 .
2. The sputtering target according to claim 1 , wherein Ln includes either of Nd or Sm.
3. The sputtering target according to claim 1 , wherein the oxide sintered body has an atomic ratio (Ga+Al)/(In+Ln+Ga+Al) when Al is included therein of 0.01 or more and 0.20 or less.
4. The sputtering target according to claim 1 , wherein the oxide sintered body has an atomic ratio Ga/(In+Ln+Ga) when Al is not included therein of 0.01 or more and 0.40 or less.
5. The sputtering target according to claim 1 , wherein the oxide sintered body has an atomic ratio Ln/(In+Ln+Ga+Al) of 0.02 or more and 0.20 or less.
6. The sputtering target according to claim 1 wherein the sintered density of the oxide sintered body is within the range of 6.5 to 7.1 g/cm 3 .
7. The sputtering target according to claim 1 wherein the bulk resistance of the oxide sintered body is 30 mΩ·cm or less.
8. The sputtering target according to claim 1 wherein the three point flexural strength of the oxide sintered body is 120 MPa or more.
9. The sputtering target according to claim 1 wherein the coefficient of linear expansion of the oxide sintered body is 8.0×10 −6 K −1 or less.
10. The sputtering target according to claim 1 wherein the thermal conductivity of the oxide sintered body is 5.0 W/m·K or more.