Nanoscale X-ray tomosynthesis for rapid analysis of integrated circuit (IC) dies
System and method for imaging an integrated circuit (IC). The imaging system comprises an x-ray source including a plurality of spatially and temporally addressable electron sources, an x-ray detector arranged such that incident x-rays are oriented normal to an incident surface of the x-ray detector and a three-axis stage arranged between the x-ray source and the x-ray detector, the three-axis stage configured to have mounted thereon an integrated circuit through which x-rays generated by the x-ray source pass during operation of the imaging system. The imaging system further comprises at least one controller configured to move the three-axis stage during operation of the imaging system and selectively activate a subset of the electron sources during movement of the three-axis stage to acquire a set of intensity data by the x-ray detector as the three-axis stage moves along a three-dimensional trajectory.
1. An imaging system for imaging an integrated circuit (IC), the imaging system comprising:
an x-ray source including a plurality of spatially and temporally addressable electron sources, each electron source comprising a spatially and temporally addressable gate operable to selectively activate electron emission from the electron source;
an x-ray detector arranged such that incident x-rays are oriented normal to an incident surface of the x-ray detector;
a three-axis stage arranged between the x-ray source and the x-ray detector, the three-axis stage configured to have mounted thereon an integrated circuit through which x-rays generated by the x-ray source pass during operation of the imaging system; and
at least one controller configured to:
move the three-axis stage during operation of the imaging system; and
selectively activate a subset of the electron sources during movement of the three-axis stage to acquire a set of intensity data by the x-ray detector as the three-axis stage moves along a three-dimensional trajectory.
2. The imaging system of claim 1 , wherein the plurality of spatially and temporally addressable electron sources comprise a plurality of silicon field emitter tips.
3. The imaging system of claim 2 , wherein the plurality of silicon field emitter tips include a silicon nanowire current limiter.
4. The imaging system of claim 2 , wherein for each of the plurality of electron sources:
the gate is operable to activate electron emission from a field emitter tip of the plurality of silicon field emitter tips upon application of a voltage of less than 75 V between the gate and the field emitter tip.
5. The imaging system of claim 1 , wherein the x-ray source further comprises an anode structure disposed between the plurality of electron sources and the x-ray detector, the anode structure configured to generate x-rays upon collision with electrons generated by the plurality of electron sources and to transmit the generated x-rays toward the x-ray detector.
6. The imaging system of claim 5 , wherein the anode structure comprises a thin membrane window.
7. The imaging system of claim 6 , wherein the x-ray source comprises an ultra-high vacuum enclosure arranged between the plurality of electron sources and the thin membrane window.
8. The imaging system of claim 6 , wherein the thin membrane window comprises one or more graphene layers.
9. The imaging system of claim 5 , wherein the x-ray source further comprises a plurality of cooling microchannels formed within the anode structure.
10. The imaging system of claim 5 , wherein the x-ray source further comprises at least one global focusing structure arranged to focus an electron beamlet output from each of the plurality of electron sources on the anode structure.
11. The imaging system of claim 1 , wherein the at least one controller is configured to move the three-axis stage in a step-wise fashion to each of a plurality of sequential target positions to reduce motion blur.
12. The imaging system of claim 1 , wherein the at least one controller is configured to move the three-axis stage with a 1 nm translation resolution and 7 mm travel in an x-y plane parallel to the x-ray detector and a 0.2 nm resolution and 100 μm travel in a z-direction perpendicular to the x-y plane.
13. The imaging system of claim 1 , wherein the x-ray detector comprises a high resolution camera having a resolution of at least 36.3 Megapixels.
14. The imaging system of claim 1 , wherein the x-ray detector comprises a scintillator plate and magnifying optics to achieve an effective pixel size of 1 μm or smaller.
15. The imaging system of claim 1 , further comprising at least one processing computer configured to:
receive the set of intensity data from the x-ray detector captured along the three-dimensional trajectory; and
perform a tomosynthesis reconstruction process using the set of intensity data to reconstruct a three-dimensional image of the integrated circuit.
16. The imaging system of claim 15 , wherein performing a tomosynthesis reconstruction process comprises reconstructing absorption and phase images of the integrated circuit.
17. The imaging system of claim 16 , wherein the at least one processing computer is further configured to distinguish different materials in the integrated circuit based on an analysis of the absorption and phase images.
18. The imaging system of claim 15 , wherein performing a tomosynthesis reconstruction process comprises solving an inverse problem using a sparse representation of an image representation.
19. The imaging system of claim 1 , wherein the three-dimensional trajectory is a three-dimensional spiral.
20. The imaging system of claim 1 , wherein the at least one controller is further configured to:
construct an image of the integrated circuit based on the acquired set of intensity data, the image having a resolution of 20 nm or less.
21. A method of imaging an integrated circuit using an imaging device comprising a plurality of electron sources, an x-ray detector and a three-axis stage arranged between the plurality of electron sources and the x-ray detector and configured to have mounted thereon the integrated circuit, the method comprising:
moving, using at least one controller, the three-axis stage along a three-dimensional trajectory during operation of the imaging device;
activating a first subset of the electron sources to acquire a first set of intensity data by the x-ray detector when the three-axis stage is at a first position along the three-dimensional trajectory;
activating a second subset of the electron sources different from the first subset to acquire a second set of intensity data by the x-ray detector when the three-axis stage is at a second position different from the first position along the three-dimensional trajectory; and
performing a tomosynthesis reconstruction process using the first and second sets of intensity data.
22. An imaging system for imaging an integrated circuit (IC), the imaging system comprising:
an x-ray source including a plurality of spatially and temporally addressable electron sources and a transmission-type anode;
an x-ray detector arranged such that incident x-rays are oriented normal to an incident surface of the x-ray detector, wherein the transmission-type anode is disposed between the plurality of electron sources and the x-ray detector;
a three-axis stage arranged between the x-ray source and the x-ray detector, the three-axis stage configured to have mounted thereon an integrated circuit through which x-rays generated by the x-ray source pass during operation of the imaging system; and
at least one controller configured to:
move the three-axis stage during operation of the imaging system; and
selectively activate a subset of the electron sources during movement of the three-axis stage to acquire a set of intensity data by the x-ray detector as the three-axis stage moves along a three-dimensional trajectory.