P-type oxide semiconductor and method for manufacturing same
A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium.
1. A p-type oxide semiconductor comprising:
a crystalline oxide semiconductor as a major component, the crystalline oxide semiconductor comprising a crystal of a metal oxide that comprises iridium or the crystalline oxide semiconductor comprising a mixed crystal of a metal oxide that comprises iridium, and the crystalline oxide semiconductor having a corundum structure or a β-gallia structure.
2. The p-type oxide semiconductor according to claim 1 ,
wherein the metal oxide comprises Ir 2 O 3 .
3. The p-type oxide semiconductor according to claim 1 ,
wherein the crystalline oxide semiconductor comprises the mixed crystal of iridium and a metal selected from among a metal of Group 2 of the periodic table, a metal except iridium of Group 9 of the periodic table, and a metal of Group 13 of the periodic table.
4. A semiconductor device comprising:
a p-type semiconductor layer comprising a p-type oxide semiconductor including a crystalline oxide semiconductor as a major component, the crystalline oxide semiconductor comprising a crystal of a metal oxide that comprises iridium or the crystalline oxide semiconductor comprising a mixed crystal of a metal oxide that comprises iridium;
an electrode; and
an n-type semiconductor layer comprising an oxide semiconductor as a major component,
wherein a difference in lattice constants between the oxide semiconductor comprised as the major component in the n-type semiconductor layer and the p-type oxide semiconductor comprised in the p-type semiconductor layer is 1.0% or less.
5. The semiconductor device according to claim 4 ,
wherein the n-type semiconductor layer comprises as the major component the oxide semiconductor comprising a metal of Group 2 of the periodic table, a metal of Group 9 of the periodic table, or a metal of Group 13 of the periodic table.
6. The semiconductor device according to claim 4 ,
wherein the n-type semiconductor layer comprises as a major component a crystalline oxide semiconductor comprising gallium (Ga).
7. The semiconductor device according to claim 4 ,
wherein the semiconductor device is a heterojunction bipolar transistor (HBT).
8. A semiconductor system comprising:
the semiconductor device according to claim 4 .