Method of producing an optoelectronic component
A method of producing an optoelectronic component includes providing a carrier having an upper side; providing a mat configured as a fiber-matrix semifinished product and having a through-opening; arranging an optoelectronic semiconductor chip over the upper side of the carrier; arranging the mat over the upper side of the carrier such that the optoelectronic semiconductor chip is arranged in the opening of the mat; and compacting the mat to form a composite body including the mat and the optoelectronic semiconductor chip.
1. A method of producing an optoelectronic component comprising:
providing a carrier having an upper side;
providing a mat configured as a fiber-matrix semifinished product and having a through-opening;
arranging an optoelectronic semiconductor chip over the upper side of the carrier;
arranging the mat over the upper side of the carrier such that 1) an upper side, facing away from the carrier of the mat is raised above an upper side, facing away from the carrier, of the optoelectronic semiconductor chip, and 2) the optoelectronic semiconductor chip is arranged in the opening of the mat; and
compacting the mat to form a composite body comprising the mat and the optoelectronic semiconductor chip such that the upper side of the mat and the upper side of the optoelectronic semiconductor chip are flush after compacting the mat.
2. The method according to claim 1 , further comprising:
separating the composite body from the carrier.
3. The method according to claim 1 , further comprising dividing the composite body,
wherein the mat is provided having a multiplicity of through-openings,
a multiplicity of optoelectronic semiconductor chips are arranged over the upper side of the carrier, and
the mat is arranged over the upper side of the carrier such that an optoelectronic semiconductor chip is respectively arranged in each opening of the mat.
4. The method according to claim 1 , wherein the opening of the mat is dimensioned such that, after the mat has been arranged over the upper side of the carrier, a circumferential gap remains between the optoelectronic semiconductor chip and the edge of the opening, which gap has a width of 50 μm to 400 μm.
5. The method according to claim 1 , wherein compacting the mat is carried out by a vacuum bag method in an autoclave or by compression molding.
6. The method according to claim 1 , wherein the mat comprises fibers present as a quasi-isotropic fabric.
7. The method according to claim 1 , wherein the mat comprises fibers present as a unidirectional fabric.
8. The method according to claim 1 , wherein the mat comprises glass fibers or E-glass.
9. The method according to claim 1 , wherein the mat comprises aramid fibers.
10. The method according to claim 1 , wherein the mat has after the compacting a fiber volume content of 30% to 70%.
11. The method according to claim 1 , wherein the mat comprises an epoxy resin.
12. The method according to claim 1 , wherein providing the mat comprises formation of the opening by a stamping method, a cutting method or a laser cutting method.
13. The method according to claim 1 , wherein the carrier is provided as a circuit board, a ceramic carrier or a metal carrier.
14. The method according to claim 1 ,
wherein the carrier has a first thermal expansion coefficient,
the material of the mat has a second thermal expansion coefficient after the compacting, and
the first thermal expansion coefficient and the second thermal expansion coefficient differ by no more than 20%.