IP Library Granted Patent US 11,670,742
Granted Patent B2
US 11,670,742 · App. 16/327,691 · Granted Jun 6, 2023

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip and headlight comprising an optoelectronic semiconductor chip

Inventors: Britta Göötz (Regensburg, DE); Alexander Linkov (Regensburg, DE)
Assignee: OSRAM OLED GmbH
H01L33/504F21S41/00H01L25/0753H01L25/167H01L27/156H01L33/505H01L33/56H01L33/08H01L33/58H01L2933/0041H01L2933/0058
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Quick Facts
Patent No.
US 11,670,742
App. No.
16/327,691
Granted
Jun 6, 2023
Kind
B2
Abstract

An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having a plurality of pixels, the semiconductor layer sequence comprising an active layer configured to generate electromagnetic radiation of a first wavelength range and a plurality of conversion elements, wherein each conversion element is configured to convert the radiation of the first wavelength range into radiation of a second wavelength range, wherein each pixel has a radiation exit surface and a conversion element is arranged on each radiation exit surface, and wherein each conversion element has a greater thickness in a central region than in a peripheral region.

Claims (10)

1. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence having a plurality of pixels, the semiconductor layer sequence comprising an active layer configured to generate electromagnetic radiation of a first wavelength range; and

a plurality of conversion elements,

wherein each conversion element is configured to convert the radiation of the first wavelength range into radiation of a second wavelength range,

wherein each pixel has a radiation exit surface,

wherein a conversion element is arranged on each radiation exit surface,

wherein each conversion element has a greater thickness in a central region than in a peripheral region,

wherein a first group of pixels together with their respective conversion elements are configured to emit warm white light and a second group of pixels together with their respective conversion elements are configured to emit cold white light, and

wherein the pixels of the first group and the pixels of the second group are arranged in a checkerboard pattern.

2. The optoelectronic semiconductor chip according to claim 1 , wherein each conversion element has a shape which is rotationally symmetrical to an axis of the conversion element.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051464/0504 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2019
From: GÖÖTZ, BRITTA; LINKOV, ALEXANDER
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 049291/0444 →
Priority Claims (1)
DE 102016115533.0 · Aug 22, 2016 · national
Continuity (1)
Related Publication 20190207066A1 · Jul 4, 2019