Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.
1. A method of producing optoelectronic semiconductor components including:
providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier comprises a plurality of control units that drive the pixels,
providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material,
structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and
applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels,
wherein the adjacent pixels are optically isolated by an opaque partition wall from each other, and the partition wall completely penetrates at least one conversion unit and extends into the semiconductor layer sequence.
2. The method according to claim 1 , wherein neither structuring the semiconductor layer sequence to the pixels nor structuring the semiconductor material changes a position of remaining regions of the semiconductor layer sequence or the semiconductor material relative to each other, and the semiconductor layer sequence is based on AlInGaN, the semiconductor material is based on AlInGaN, AlInGaP or AlInGaAs, and the carrier is based on Si or Ge.
3. The method according to claim 1 , wherein at least two conversion units are grown one above the other on a common growth substrate, and at least one of the conversion units is structured while still applied to the common growth substrate.
4. The method according to claim 3 , wherein only one of the conversion units is structured on the common growth substrate, and, after structuring of this conversion unit, the semiconductor layer sequence is mounted and then detached of the growth substrate, and only subsequent the at least one further conversion unit is structured.
5. The method according to claim 1 , wherein several of the conversion units are each grown on an associate growth substrate.
6. The method according to claim 5 , wherein the conversion units are each structured on the associated growth substrate, a planarization layer made of a radiation-permeable material is applied after structuring, and the planarization layer completely covers the conversion units at least temporarily on a side facing away from the associated growth substrate.
7. The method according to claim 5 , wherein the conversion units are attached to each other before the growth substrates are detached, and one of the conversion units is subsequently structured, the semiconductor layer sequence is then attached, the remaining growth substrate is subsequently detached, and only subsequent the at least one further conversion unit is structured.
8. The method according to claim 1 , wherein at least one conversion unit is attached to the semiconductor layer sequence by wafer bonding, and a light path between the carrier and a light-exit side of the conversion unit facing away from the carrier is free of organic materials.
9. The method according to claim 1 , wherein some of the pixels are not assigned a conversion unit, so that the selected pixels emit the primary light (B), remaining pixels each being assigned exactly one conversion unit so that there are no conversion units stacked one above the other, and three pixels emitting different colors are combined to form a display region that is adjustable to emit light of different colors.
10. The method according to claim 1 , wherein the semiconductor layer sequence extends continuously and contiguously over all the pixels.
11. The method according to claim 1 , further comprising applying at least one mirror layer to a side of the conversion units facing the semiconductor layer sequence, wherein the mirror layer is impermeable to the secondary light (G, R) produced in the associated conversion unit and permeable to the primary light (B).
12. The method according to claim 1 , further comprising applying at least one filter layer to a side of the conversion units facing away from the carrier, wherein the filter layer is impermeable to the primary light (B), and the filter layer completely covers the conversion units.
13. The method according to claim 1 , wherein the conversion unit or each of the conversion units and/or the semiconductor layer sequence have a thickness of 1 μm to 10 μm,
the pixels having an average diameter of 3 μm to 200 μm in plan view, a distance between adjacent pixels is 0.3 μm to 6 μm, and the finished semiconductor component includes 100 to 10 7 of the pixels.