Electron beam apparatus
An electron beam apparatus which can stably achieve high spatial resolution also during low acceleration observation using CeB 6 for the CFE electron source is provided. In an electron beam apparatus having a CFE electron source, the emitter of the electron beam of the CFE electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce, the hexaboride emits the electron beam from the {310} plane, and the number of the atoms of the lanthanoid metal on the {310} plane is larger than the number of boron molecules comprising six boron atoms on the {310} plane.
1. An electron beam apparatus having a cold field emission electron source characterized in that
the emitter of the electron beam of the cold field emission electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce,
the hexaboride emits the electron beam from the {310} plane, and
the number of the atoms of the lanthanoid metal on the {310} plane is larger than the number of boron molecules comprising six boron atoms on the {310} plane.
2. The electron beam apparatus according to claim 1 characterized in that facets are formed on the {210} plane and the {211} plane of the hexaboride.
3. The electron beam apparatus according to claim 1 characterized in that the {310} plane is formed with a pillar tip of the hexaboride that has been sharpened by electrolytic polishing, then field-evaporated and heated.
4. The electron beam apparatus according to claim 3 characterized in that the temperature for heating the hexaboride is 700° C. or higher and 1400° C. or lower.
5. The electron beam apparatus according to claim 1 characterized by further having
a heating power supply for heating the cold field emission electron source and
a controller unit for controlling the heating power supply in a manner that the temperature of the cold field emission electron source intermittently becomes 900° C. or higher and 1400° C. or lower.
6. The electron beam apparatus according to claim 3 characterized by further having
a heating power supply for heating the cold field emission electron source and
a display unit in which a heating temperature, a heating period, any one of or a combination of a current, a voltage and an electric power corresponding to the heating temperature obtained during tip production or a level indicating a heating strength is selected and input to the heating power supply.
7. The electron beam apparatus according to claim 1 characterized in that the proportion of the atoms of the lanthanoid metal to all the atoms on the surface of the {310} plane is 33% or more.
8. An electron beam apparatus having a cold field emission electron source characterized in that
the emitter of the electron beam of the cold field emission electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce, and
the full width at half maximum of the energy distribution of the electron beam emitted from a plane including the {310} plane of the hexaboride is 0.27 eV or less.
9. The electron beam apparatus according to claim 8 characterized in that facets are formed on the {210} plane and the {211} plane of the hexaboride.
10. The electron beam apparatus according to claim 8 characterized in that the {310} plane is formed with a pillar tip of the hexaboride that has been sharpened by electrolytic polishing, then field-evaporated and heated.
11. The electron beam apparatus according to claim 10 characterized in that the temperature for heating the hexaboride is 700° C. or higher and 1400° C. or lower.
12. An electron beam apparatus having a cold field emission electron source characterized in that
the emitter of the electron beam of the cold field emission electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce, and
the ratio JΩ/It of the angular current density JΩ (μA/sr) of the electron beam emitted from a plane including the {310} plane of the hexaboride to the total current It (μA) emitted from the cold field emission electron source is six or more.
13. The electron beam apparatus according to claim 12 characterized in that facets are formed on the {210} plane and the {211} plane of the hexaboride.
14. The electron beam apparatus according to claim 12 characterized in that the {310} plane is formed with a pillar tip of the hexaboride that has been sharpened by electrolytic polishing, then field-evaporated and heated.
15. The electron beam apparatus according to claim 14 characterized in that the temperature for heating the hexaboride is 700° C. or higher and 1400° C. or lower.