High etch resistance spin-on carbon hard mask composition and patterning method using same
Provided is a hard mask composition having high etching resistance suitable for use in a semiconductor lithography process, and particularly to a spin-on hard mask composition including a dibenzo carbazole polymer and to a patterning method of forming a hard mask layer by applying the composition on an etching layer through spin coating and performing a baking process. The hard mask according to the present invention has effects of exhibiting high solubility and superior mechanical properties, as well as high etching resistance to withstand multiple etching processes.
1. A spin-on hard mask composition, comprising a dibenzo carbazole derivative polymer having a weight average molecular weight of 3,000 to 8,000 and represented by Chemical Formula 1 below:
in Chemical Formula 1,
l, m and n are 1≤l≤20, 1≤m≤20, and 1≤n≤20, respectively,
R 1 includes any one selected from among hydrogen (H),
R 2 includes any one selected from among
and R 3 includes
any one selected from among
2. The spin-on hard mask composition of claim 1 , wherein the weight average molecular weight of the polymer is 3,500 to 7,000.
3. The spin-on hard mask composition of claim 2 , wherein the weight average molecular weight of the polymer is 5,000 to 6,000.
4. The spin-on hard mask composition of claim 1 , wherein the hard mask composition comprises the dibenzo carbazole derivative polymer, an organic solvent, and a surfactant.
5. The spin-on hard mask composition of claim 4 , wherein the polymer is contained in an amount of 1 to 50 wt % based on a total amount of the composition.
6. The spin-on hard mask composition of claim 4 , wherein the organic solvent is contained in an amount of 50 to 99 wt % based on a total amount of the composition.
7. The spin-on hard mask composition of claim 4 , wherein the surfactant is contained in an amount of 0 to 2 wt % based on a total amount of the composition.
8. The spin-on hard mask composition of claim 4 , wherein the organic solvent is any one or a mixture of two or more selected from the group consisting of propylene glycol monomethylether (PGME), propylene glycol monomethylether acetate (PGMEA), cyclohexanone, γ-butyrolactone, ethyl lactate (EL), methyl ethyl ketone, n-butyl acetate, N-methylpyrrolidone (NMP), methyl 3-methoxypropionate (MMP), ethyl 3-ethoxypropionate (EEP), and dimethylformamide (DMF).
9. The spin-on hard mask composition of claim 4 , wherein the surfactant is any one or a mixture of two or more selected from the group consisting of polyoxyethylene alkylethers, polyoxyethylene alkylphenylethers, polyoxyethylene nonylphenylethers, polyoxyethylene octylphenylethers, polyoxyethylene polyoxypropylenes, polyoxyethylene lauryl ethers, and polyoxyethylene sorbitans.
10. The spin-on hard mask composition of claim 4 , wherein, based on a total amount of the composition, the polymer is contained in an amount of 1 to 50 wt %, the organic solvent is contained in an amount of 50 to 99 wt %, and the surfactant is contained in an amount of 0 to 2 wt %.
11. The spin-on hard mask composition of claim 10 , wherein the organic solvent is any one or a mixture of two or more selected from the group consisting of propylene glycol monomethylether (PGME), propylene glycol monomethylether acetate (PGMEA), cyclohexanone, γ-butyrolactone, ethyl lactate (EL), methyl ethyl ketone, n-butyl acetate, N-methylpyrrolidone (NMP), methyl 3-methoxypropionate (MMP), ethyl 3-ethoxypropionate (EEP), and dimethylformamide (DMF).
12. The spin-on hard mask composition of claim 10 , wherein the surfactant is any one or a mixture of two or more selected from the group consisting of polyoxyethylene alkylethers, polyoxyethylene alkylphenylethers, polyoxyethylene nonylphenylethers, polyoxyethylene octylphenylethers, polyoxyethylene polyoxypropylenes, polyoxyethylene lauryl ethers, and polyoxyethylene sorbitans.
13. A patterning method, comprising forming a hard mask layer by applying the hard mask composition of claim 1 on an etching layer through spin coating and performing a baking process.
14. The patterning method of claim 13 , wherein the baking process is performed at a temperature of 150° C. to 400° C. for 1 min to 5 min, thus forming the hard mask layer.