Solid-state image pickup element, method of manufacturing solid-state image pickup element, and electronic apparatus
To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.
1. A solid-state image pickup element comprising:
a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate,
wherein some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate,
wherein other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate,
wherein the plurality of pixels includes a combination of a red pixel, a blue pixel, and a green pixel,
wherein the pixels each having the photoelectric conversion element partitioned by the second-type separating region include the blue pixel, and
wherein the pixels each having the photoelectric conversion element partitioned by the first-type separating region include the red pixel and the green pixel.
2. A solid-state image pickup element comprising:
a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate,
wherein some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate,
wherein other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate, and
wherein the second-type separating region having the plate shape comprises a silicon dioxide film, the second-type separating region having a plate thickness equal to or less than a wavelength of blue light.
3. The solid-state image pickup element according to claim 2 , wherein the plurality of pixels includes a combination of a red pixel, a blue pixel, and a green pixel,
the pixels each having the photoelectric conversion element partitioned by the second-type separating region, include the blue pixel, and
the pixels each having the photoelectric conversion element partitioned by the first-type separating region, include the red pixel and the green pixel.
4. The solid-state image pickup element according to claim 2 , wherein the pixels each having the photoelectric conversion element partitioned by the first-type separating region are different in color from the pixels each having the photoelectric conversion element partitioned by the second-type separating region.
5. An electronic apparatus comprising:
a solid-state image pickup element that includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate,
wherein some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate,
wherein other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate,
wherein the plurality of pixels includes a combination of a red pixel, a blue pixel, and a green pixel,
wherein the pixels each having the photoelectric conversion element partitioned by the second-type separating region include the blue pixel, and
wherein the pixels each having the photoelectric conversion element partitioned by the first-type separating region include the red pixel and the green pixel.