IP Library Granted Patent US 10,826,009
Granted Patent B2
US 10,826,009 · App. 16/348,295 · Granted Nov 3, 2020

Quantum dot light-emitting diode and display apparatus thereof

Inventors: Zhurong Liang (Huizhou, CN); Weiran Cao (Huizhou, CN)
Assignee: TCL TECHNOLOGY GROUP CORPORATION
H01L51/502H01L33/06H01L33/26H01L51/0003H01L51/5004H01L2251/301H01L2251/558
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Quick Facts
Patent No.
US 10,826,009
App. No.
16/348,295
Granted
Nov 3, 2020
Kind
B2
Abstract

A quantum dot light-emitting diode and a display apparatus comprising the quantum dot light-emitting diode are provided. The quantum dot light-emitting diode comprises an anode, a hole injecting layer, a hole transporting layer, a quantum dot light-emitting layer, an electron transporting layer and a cathode from bottom to top, wherein the materials of the quantum dot light-emitting layer contain quantum dots and CuSCN nano-particles. By blending quantum dots and CuSCN nano-particles into a membrane to prepare a quantum dot light-emitting layer, a hole trap state on the surface of the quantum dots is passivated, and the transporting effect of a hole is improved, so that the injection of holes in the quantum dot light-emitting diode and that of electrons achieve balance, and thus the light-emitting efficiency and stability are improved.

Claims (6)

1. A quantum dot (QD) light-emitting diode, wherein comprising an anode, a cathode, and a QD light emitting layer arranged between the anode and the cathode;

wherein a material of the QD light-emitting layer comprises a plurality of QDs and a plurality of cuprous thiocyanate (CuSCN) nanoparticles, and a mass ratio between the QDs and the CuSCN nanoparticles is in a range of 0.001˜20:1.

2. The QD light-emitting diode according to claim 1 , wherein further comprising a holes injection layer arranged between the anode and the QD light emitting layer, a holes transport layer arranged between the holes injection layer and the QD light-emitting layer, and an electrons transport layer arranged between the cathode and the QD light-emitting layer, the holes transport layer overlays the QD light-emitting layer.

3. The QD light-emitting diode according to claim 1 , wherein a thickness of the QD light-emitting layer is 10˜100 nm.

4. The QD light-emitting diode according to claim 1 , wherein a size range of the CuSCN nanoparticles is 0.5˜50 nm.

5. A display apparatus, wherein comprising the QD light-emitting diode according to claim 1 .

Assignments (2)
CHANGE OF NAME Recorded Apr 24, 2020
From: TCL CORPORATION
To: TCL TECHNOLOGY GROUP CORPORATION
Reel/Frame 052493/0674 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2019
From: LIANG, ZHURONG; CAO, WEIRAN
To: TCL CORPORATION
Reel/Frame 049115/0458 →
Priority Claims (1)
CN 2016 1 1015977 · Nov 18, 2016 · national
Continuity (1)
Related Publication 20200058889A1 · Feb 20, 2020