Method of producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

1. A method of manufacturing an optoelectronic semiconductor chip comprising:

providing a growth substrate,

growing a semiconductor layer sequence on said growth substrate, said semiconductor layer sequence comprising an active layer that generates radiation and is arranged between a first and a second semiconductor region,

depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate,

depositing a layer on the metallization, the layer comprising a semiconductor containing nitrogen and a further material,

coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence,

separating the growth substrate from the semiconductor layer sequence,

depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier,

separating the carrier from the layer by laser radiation through the carrier, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer comprising at least a part of the further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence after separating,

coupling the layer stack to a chip carrier by the coupling layer so that the chip carrier and the layer stack are electrically conductively coupled to one another by the further material, and

wherein depositing a layer comprises applying the layer including a material having a smaller band gap than the carrier.

2. The method according to claim 1 , wherein the layer is applied with a thickness of 0.5 nanometers to 150 nanometers in the direction of the growth direction of the semiconductor layer sequence.

3. The method according to claim 1 , wherein the layer is formed of indium nitride or comprises indium nitride or is formed of gallium nitride or comprises gallium nitride.

4. A layer structure comprising a semiconductor layer sequence with an active layer between a first semiconductor region and a second semiconductor region, wherein a metallization is applied on the first semiconductor region, a layer is applied on a side of the metallization facing away from the semiconductor layer sequence, the layer contains nitrogen and a further material, the metallization is applied over the entire surface of the first semiconductor region, and the layer is applied over the entire surface of the metallization.

5. The layer structure according to claim 4 , wherein the further material is gallium or indium.

6. The layer structure according to claim 4 , wherein the layer is applied with a thickness of more than 1 nm and less than 100 nm, and the thickness is measured along the growing direction.

7. A method of manufacturing an optoelectronic semiconductor chip comprising:

providing a growth substrate,

growing a semiconductor layer sequence on said growth substrate, said semiconductor layer sequence comprising an active layer that generates radiation and is arranged between a first and a second semiconductor region,

depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate,

depositing a layer on the metallization, the layer comprising a semiconductor containing nitrogen and a further material,

coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence,

separating the growth substrate from the semiconductor layer sequence,

depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier,

separating the carrier from the layer by laser radiation through the carrier, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer comprising at least a part of the further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence after separating, and

coupling the layer stack to a chip carrier by the coupling layer so that the chip carrier and the layer stack are electrically conductively coupled to one another by the further material, wherein at least one of i to vi:

i. the temperature of the coupling layer is maintained greater than the melting point of the further material after the carrier has been detached until it is coupled to the chip carrier;

ii. the layer is in direct contact with the carrier prior to detachment of the carrier;

iii. the carrier comprises a semiconductor material and is coupled to the layer by semiconductor-semiconductor bonding;

iv. the metallization is applied over the entire surface to the side of the semiconductor layer sequence facing away from the growth substrate, the layer is applied over its entire surface to the metallization, and subsequently the layer and the metallization are jointly removed region by region to form a plurality of contact regions;

v. the layer stack is structured before the carrier is detached so that it has an edge length transverse to the stacking direction of less than 150 micrometers;

vi. the laser radiation is irradiated at a wavelength which lies in the infrared range and which is absorbed by the layer.