Method for the collective production of a plurality of optoelectronic chips
A method is provided for producing, on a wafer-scale, a plurality of optoelectronic chips, including: providing a receiver substrate including a plurality of elementary zones, each being configured to contain one optoelectronic chip, and each including at least one coupling waveguide integrated into the receiver substrate and configured to be optically coupled to a first optoelectronic component; transferring a plurality of pads to the elementary zones such that the pads partially cover the at least one coupling waveguide; and producing the first optoelectronic component from the pads such that each first optoelectronic component is facing the at least one coupling waveguide of a corresponding elementary zone, and, following the transferring step, each pad of the plurality of pads extends over a set of at least two adjacent elementary zones, so as to partially cover the at least one coupling waveguide of each of the adjacent elementary zones.
1. A process for producing, on a wafer-scale, a plurality of optoelectronic chips, comprising the following steps:
providing a receiver substrate comprising a plurality of elementary zones, each of which being configured to contain one optoelectronic chip, and each of which comprising at least one coupling waveguide integrated into the receiver substrate and configured to be optically coupled to a first optoelectronic component;
transferring a plurality of pads to the plurality of elementary zones such that the pads partially cover the at least one coupling waveguide; and
producing the first optoelectronic component from the pads such that each first optoelectronic component is facing the at least one coupling waveguide of a corresponding elementary zone,
wherein, following the transferring step, each pad of the plurality of pads extends over a set of at least two adjacent elementary zones, so as to partially cover the at least one coupling waveguide of each of said adjacent elementary zones,
wherein at least one first optoelectronic component of a first elementary zone and at least one second optoelectronic component of a second elementary zone adjacent to the first elementary zone and belonging to the set, are respectively spaced apart by an equal distance from a separation line forming a common border to the first and second adjacent elementary zones, and
wherein the first and second optoelectronic components are produced from the same pad.
2. The process according to claim 1 , wherein, in the step of producing the first optoelectronic component, said each first optoelectronic component produced is disposed facing one of the at least one coupling waveguide of said adjacent elementary zones of said set.
3. The process according to claim 1 , wherein the distance is less than 600 μm.
4. The process according to claim 1 , wherein the first optoelectronic component and the second optoelectronic component are spaced apart from each other by a distance less than 1.2 μm.
5. The process according to claim 1 , wherein a first optoelectronic component is disposed facing a coupling portion of a first coupling waveguide of a first elementary zone of a set, and a second optoelectronic component is disposed facing a coupling portion of a second coupling waveguide of a second elementary zone adjacent to the first elementary zone and belonging to the set, the first and second coupling waveguides extending in parallel from respective coupling portions thereof.
6. The process according to claim 5 , wherein the first and second coupling waveguides extend, from the respective coupling portions, in opposite directions to each other.
7. The process according to claim 5 , wherein the first and second coupling waveguides extend, from the respective coupling portions, in directions that are parallel to each other.
8. The process according to claim 5 , wherein the first coupling waveguide and the second coupling waveguide extend, from the respective coupling portions, so as to have, with respect to each other, an axial symmetry about a separation line forming a common border to the first and second elementary zones.
9. The process according to claim 1 , wherein said each pad of the plurality of pads extends over a set of four pairwise adjacent elementary zones.
10. The process according to claim 1 , wherein said each pad of the plurality of pads comprises a semiconductor segment based on a semiconductor compound, and a growth substrate from which the semiconductor segment is produced by epitaxy.
11. The process according to claim 10 , further comprising a step of removing the growth substrate, the growth substrate being made from an alloy based on said semiconductor compound.
12. The process according to claim 1 , wherein said each pad of the plurality of pads comprises a semiconductor segment based on a III-V semiconductor compound.
13. The process according to claim 1 , wherein the first optoelectronic component is a laser source, a photodiode, or an electro-optical modulator.
14. The process according to claim 1 ,
wherein each elementary zone of the set of at least two adjacent elementary zones comprises an array of a plurality of coupling waveguides, and
wherein an array of a plurality of first optoelectronic components is produced for each of the elementary zones of said set, such that first optoelectronic components of the array are respectively facing corresponding coupling waveguides.
15. The process according to claim 1 , further comprising:
a step of transferring a plurality of first pads, from which a plurality of laser diodes are produced; and
a step of transferring a plurality of second pads, from which a plurality of photodiodes or a plurality of electro-optical modulators are produced.