Doped bismuth silicate crystals via devitrification of glass forming liquids
This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi 2-x A x SiO 5 , Bi 2-x A x Si 3 O 9 , Bi 4-x A x Si 3 O 9 , and Bi 12-x A x SiO 20 , where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.
1. A doped bismuth-silicate seed crystal comprising from 48.750 to 49.975 mol % bismuth trioxide, 50.000 mol % silicon dioxide, and 0.025 to 1.250 mol % of a rare earth dopant A, having a stoichiometry of Bi 2-x A x SiO 5 , and where x=0.001 to 0.05.
2. The doped bismuth-silicate seed crystal of claim 1 , wherein the dopant A is selected from the group consisting of lanthanum, neodymium, praseodymium, cerium, samarium, and mixtures thereof.
3. The doped bismuth-silicate seed crystal of claim 2 , wherein the dopant is Sm.
4. The doped bismuth-silicate seed crystal of claim 2 , wherein the dopant is Pr.
5. The doped bismuth-silicate seed crystal of claim 2 , wherein the dopant is Nd.
6. A doped bismuth-silicate seed crystal wherein the dopant is La, with a stoichiometry of Bi 1.9 La 0.1 SiO 5 .
7. The doped bismuth-silicate seed crystal of claim 2 , wherein the dopant is Ce.
8. The doped bismuth-silicate seed crystal of claim 1 for use in automotive enamels.
9. The doped bismuth-silicate seed crystal of claim 1 for use in optical devices.
10. The doped bismuth-silicate seed crystal of claim 1 for use in luminescent materials.