Solid-state imaging device, method of manufacturing the same, and electronic apparatus
The present technology relates to a solid-state imaging device that can improve the sensitivity of imaging pixels while maintaining AF properties of a focus detecting pixel. The present technology also relates to a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes: a pixel array unit including pixels; first microlenses formed in the respective pixels; a film formed to cover the first microlenses of the respective pixels; and a second microlens formed on the film of the focus detecting pixel among the pixels. The present technology can be applied to CMOS image sensors, for example.
1. An imaging device comprising:
a first photoelectric conversion unit and a second photoelectric conversion unit disposed in a semiconductor substrate, the first and second photoelectric conversion units being disposed adjacent to each other;
a first micro lens disposed above the first and second photoelectric conversion units;
a second micro lens disposed above the first photoelectric conversion unit; and
a third micro lens disposed above the second photoelectric conversion unit, wherein the second micro lens and the third micro lens are disposed below the first micro lens, wherein, in a cross-sectional view, a highest position of the first micro lens is higher than a highest position of the second micro lens, wherein a highest position of the third micro lens is at a same level as the highest position of the second micro lens, wherein the first micro lens overlaps the second and third micro lenses and the first and second photoelectric conversion units in a plan view, and wherein a film covers the second micro lens and the third micro lens.
2. The imaging device according to claim 1 , further comprising:
a first color filter disposed between the first micro lens and the semiconductor substrate; and
a second color filter disposed between the second micro lens and the semiconductor substrate, wherein the first color filter has a same spectral characteristic as the second color filter.
3. The imaging device according to claim 1 , further comprising:
a first color filter disposed between the first micro lens and the semiconductor substrate; and
a second color filter disposed between the second micro lens and the semiconductor substrate, wherein the first color filter has a different spectral characteristic from the second color filter.
4. The imaging device according to claim 1 , further comprising: the film between the first micro lens and the second micro lens.
5. The imaging device according to claim 1 , wherein the first photoelectric conversion unit is a same size as a third photoelectric conversion unit.
6. The imaging device according to claim 1 , further comprising a light shielding film disposed between the semiconductor substrate and an interface between the first micro lens and the second micro lens.
7. An imaging apparatus comprising:
a first photoelectric conversion unit and a second photoelectric conversion unit disposed in a semiconductor substrate, the first and second photoelectric conversion units being disposed adjacent to each other;
a first micro lens disposed above the first and second photoelectric conversion units;
a second micro lens disposed above the first photoelectric conversion unit;
a third micro lens disposed above the second photoelectric conversion unit, wherein the second micro lens and the third micro lens are disposed below the first micro lens, wherein, in a cross-sectional view, a highest position of the first micro lens is higher than a highest position of the second micro lens, wherein a highest position of the third micro lens is at a same level as the highest position of the second micro lens, wherein the first micro lens overlaps the second and third micro lenses and the first and second photoelectric conversion units in a plan view, and wherein a film covers the second micro lens and the third micro lens;
an optical lens;
a driving circuitry; and
a digital processing circuitry.
8. An imaging device comprising:
a pair of focus detecting pixels comprising:
a first focus detecting pixel;
a second focus detecting pixel disposed adjacent to the first focus detecting pixel;
a first micro lens shared by the first focus detecting pixel and the second focus detecting pixel; and
a third micro lens disposed below the first micro lens; and
an imaging pixel disposed adjacent to the pair of focus detecting pixels, the imaging pixel comprising:
a second micro lens, wherein, in a cross-sectional view, a highest position of the first micro lens is higher than a highest position of the second micro lens, wherein a highest position of the third micro lens is at a same level as the highest position of the second micro lens, wherein at least a part of the first micro lens is disposed below the highest position of the third micro lens, and wherein a film covers the second micro lens and the third micro lens.
9. The imaging device according to claim 8 , wherein the pair of focus detecting pixels further comprises a first color filter, wherein the imaging pixel further comprises a second color filter, and wherein the first color filter has a same spectral characteristic as the second color filter.
10. The imaging device according to claim 8 , wherein the pair of focus detecting pixels further comprises a first color filter, wherein the imaging pixel further comprises a second color filter, and wherein the first color filter has a different spectral characteristic from the second color filter.
11. The imaging device according to claim 8 , further comprising: the film between the first micro lens and the third micro lens.
12. The imaging device according to claim 8 , wherein the first and second focus detecting pixels and the imaging pixel are three of a plurality of pixels arranged in rows and columns in a plane.
13. The imaging device according to claim 12 , wherein the first and second focus detecting pixels and the imaging pixel are arranged in a first row.
14. The imaging device according to claim 8 , wherein the first focus detecting pixel has a same size as the imaging pixel in a plan view.
15. The imaging device according to claim 8 , wherein a phase difference is configured to be detected by a first output from the first focus detecting pixel and a second output from the second focus detecting pixel.
16. The imaging device according to claim 8 , further comprising a light shielding film between the pair of the focus detecting pixels and the imaging pixel.
17. An imaging apparatus comprising:
an imaging device according to claim 8 ;
an optical lens;
a driving circuitry; and
a digital processing circuitry.