Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate
A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R 2 to R 5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Ar 1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; R 6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9.
1. A composition for resist underlayer film formation, comprising:
a resin comprising at least one oxazine structure fused to an aromatic ring; and
a solvent,
wherein the resin comprises a partial structure represented by formula (1):
wherein, in the formula (1),
R 2 to R 5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms;
Ar 1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms;
R 6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms;
n is an integer of 0 to 9, wherein in a case in which n is no less than 2, a plurality of R 6 s are identical or different, or wherein two or more of the plurality of R 6 s taken together represent a ring structure having 4 to 20 ring atoms together with the carbon chain to which the two or more of the plurality of R 6 s bond; and
* and ** each independently denote a bonding site to a part other than the partial structure represented by the formula (1) in the resin.
2. The composition according to claim 1 , wherein the resin comprises a group represented by formula (1-1), a group represented by formula (1-2), or a combination thereof:
wherein, in the formula (1-1),
R 1A represents a monovalent organic group having 1 to 20 carbon atoms;
R 2A to R 5A each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms;
Ar 1A represents a group obtained by removing (n1+3) or (n1+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms;
R 6A represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms;
n1 is an integer of 0 to 9, wherein in a case in which n1 is no less than 2, a plurality of R 6A s are identical or different, or wherein two or more of the plurality of R 6A s taken together represent a ring structure having 4 to 20 ring atoms together with the carbon chain to which the two or more of the plurality of R 6A s bond; and
* * denotes a bonding site to a part other than the group represented by the formula (1-1) in the resin,
wherein, in the formula (1-2),
R 2B to R 5B each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms;
Ar 1B represents a group obtained by removing (n2+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms;
R 6B represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms;
n2 is an integer of 0 to 10, wherein in a case in which n2 is no less than 2, a plurality of R 6B s are identical or different, or wherein two or more of the plurality of R 6B s taken together represent a ring structure having 4 to 20 ring atoms together with the carbon chain to which two or more of the plurality of R 6B s bond; and
** denotes a bonding site to a part other than the group represented by the formula (1-2) in the resin.
3. The composition according to claim 2 , wherein the resin comprises a plurality of groups represented by the formula (1-1), a plurality of groups represented by the formula (1-2), or a combination thereof.
4. A production method of a patterned substrate comprising:
applying the composition for resist underlayer film formation according to claim 3 directly or indirectly on a substrate to obtain a coating film;
heating the coating film to obtain a resist underlayer film;
forming a resist pattern directly or indirectly on the resist underlayer film; and
carrying out etching with the resist pattern used as a mask.
5. A production method of a patterned substrate comprising:
applying the composition for resist underlayer film formation according to claim 2 directly or indirectly on a substrate to obtain a coating film;
heating the coating film to obtain a resist underlayer film;
forming a resist pattern directly or indirectly on the resist underlayer film; and
carrying out etching with the resist pattern used as a mask.
6. The composition according to claim 1 , wherein a content of the resin in the composition is no less than 1% by mass and no greater than 50% by mass.
7. A production method of a patterned substrate comprising:
applying the composition for resist underlayer film formation according to claim 6 directly or indirectly on a substrate to obtain a coating film;
heating the coating film to obtain a resist underlayer film;
forming a resist pattern directly or indirectly on the resist underlayer film; and
carrying out etching with the resist pattern used as a mask.
8. A production method of a patterned substrate comprising:
applying the composition for resist underlayer film formation according to claim 1 directly or indirectly on a substrate to obtain a coating film;
heating the coating film to obtain a resist underlayer film;
forming a resist pattern directly or indirectly on the resist underlayer film; and
carrying out etching with the resist pattern used as a mask.