Die stacked image sensors and related methods
Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.
1. An image sensor comprising:
a first die comprising a first semiconductor substrate material from a first wafer;
a second die comprising a second semiconductor substrate material from a second wafer; and
a third die comprising a third semiconductor substrate material from a third wafer;
wherein one or more through oxide vias (TOVs) extend into an oxide material of the first die, through an oxide material of the second die, and into an oxide material of the third die.
2. The sensor of claim 1 , wherein the first die comprises a plurality of detectors adapted to convert photons to electrons.
3. The sensor of claim 1 , wherein the second die comprises a plurality of capacitors.
4. The sensor of claim 1 , wherein the third die comprises one of analog circuitry, logic circuitry, or analog circuitry and logic circuitry.
5. The sensor of claim 1 , wherein the second die is bonded to the third die with an oxide/oxide fusion bond.
6. The sensor of claim 5 , wherein the second die comprises deep trench isolation (DTI) structures.
7. The sensor of claim 1 , wherein the second die is bonded to the third die with a hybrid bond.
8. The sensor of claim 7 , wherein the second die comprises one or more through silicon vias (TSVs).
9. The sensor of claim 1 , further comprising a plurality of microlenses coupled to a surface of a plurality of pixels of the first die.
10. An image sensor comprising:
a first die comprising a first semiconductor substrate material from a first wafer;
a second die comprising a second semiconductor substrate material from a second wafer; and
a third die comprising a third semiconductor substrate material from a third wafer;
wherein one or more through silicon vias (TSVs) extend into the first die, through the second die, and into the third semiconductor substrate material of the third die; and
wherein one of the first die, the second die, the third die, or any combination thereof comprise an oxide material and comprise one or more through oxide vias (TOVs) extending through the oxide material.
11. The sensor of claim 10 , wherein the first die comprises a plurality of detectors adapted to convert photons to electrons.
12. The sensor of claim 10 , wherein the second die comprises a plurality of capacitors.
13. The sensor of claim 10 , wherein the third die comprises one of analog circuitry, logic circuitry, or analog circuitry and logic circuitry.
14. The sensor of claim 10 , further comprising a plurality of microlenses coupled to a surface of a plurality of pixels of the first die.
15. The sensor of claim 10 , wherein the second die is electrically coupled with the third die.