Optoelectronic component
An optoelectronic component includes an optoelectronic semiconductor chip that, during intended operation, generates primary radiation coupled out of the semiconductor chip via an emission side of the semiconductor chip; and a first conversion element on the emission side, wherein the first conversion element includes a first matrix material and first phosphor particles in the form of quantum dots, the first phosphor particles are distributed and embedded in the first matrix material, and the first matrix material is formed by a polysiloxane in which an atomic percentage of carbon is smaller than an atomic percentage of oxygen.
1. An optoelectronic component comprising:
an optoelectronic semiconductor chip that, during intended operation, generates primary radiation coupled out of the semiconductor chip via an emission side of the semiconductor chip; and
a first conversion element on the emission side,
wherein
the first conversion element comprises a first matrix material and first phosphor particles in the form of quantum dots,
the first phosphor particles are distributed and embedded in the first matrix material,
the first matrix material is formed by a polysiloxane having such a degree of crosslinking that an atomic percentage of carbon is smaller than an atomic percentage of oxygen,
a majority of the siloxane units in the polysiloxane are tri- or tetra functional, and
the mass fraction of the first matrix material in the first conversion element is at least 40%.
2. The optoelectronic component according to claim 1 , wherein
a silicon content in the first matrix material is 20 to 40 atomic percent,
a carbon content in the first matrix material is at most 10 atomic percent,
an oxygen content in the first matrix material is 30 to 70 atomic percent, and
the atomic percentages are normalized such that carbon, silicon and oxygen add up to 100 atomic percent.
3. The optoelectronic component according to claim 1 , wherein the mass fraction of first phosphor particles in the first conversion element is at least 20%.
4. The optoelectronic component according to claim 1 , further comprising second phosphor particles having a geometric equivalent diameter of at least 100 nm.
5. The optoelectronic component according to claim 4 , wherein the second phosphor particles are distributed and embedded in the first matrix material of the first conversion element.
6. The optoelectronic component according to claim 4 , further comprising a second conversion element, wherein
the second conversion element comprises a second matrix material,
the second phosphor particles are distributed and embedded in the second matrix material, and
the second matrix material is formed of a silicone whose atomic percentage of carbon is greater than in the first matrix material.
7. The optoelectronic component according to claim 6 , wherein the first conversion element and the second conversion element at least partially cover the emission side, and the first conversion element is arranged between the emission side and the second conversion element.
8. The optoelectronic component according to claim 6 , wherein the first conversion element and the second conversion element at least partially cover the emission side, and the second conversion element is arranged between the emission side and the first conversion element.
9. The optoelectronic component according to claim 1 , wherein the first phosphor particles comprise or consist of any of CdS, CdSe, ZnS, ZnSe and InP.