Semiconductor memory device and method of controlling the same

1. A memory system comprising:

a nonvolatile memory; and

a circuit configured to:

generate a plurality of error detection codes to detect an error in a plurality of data items, respectively;

generate a plurality of first error correction codes to correct an error in a plurality of first data blocks, respectively, each of the plurality of first data blocks including one of the plurality of data items and one of the plurality of error detection codes corresponding thereto;

generate a second error correction code to correct an error in a second data block, the second data block including at least a part of each of the plurality of first data blocks; and

write the plurality of data items, the plurality of error detection codes, the plurality of first error correction codes, and the second error correction code into the nonvolatile memory.

2. The memory system according to claim 1 , wherein each of the plurality of error detection codes is a cyclic redundancy check (CRC).

3. The memory system according to claim 1 , wherein

the circuit includes a memory, and

the memory is configured to store each of the plurality of error detection codes.

4. The memory system according to claim 1 , wherein the circuit is further configured to:

correct, by using one of the plurality of first error correction codes, an error in one of the plurality of first data blocks read from the nonvolatile memory; and

determine, by using one of the plurality of error detection codes, whether the error in the one of the plurality of first data blocks has been corrected.

5. The memory system according to claim 4 , wherein the circuit is further configured to correct, by using the second error correction code, an error in the second data block that includes at least a part of the one of the plurality of first data blocks that has been subject to the error correction by using the one of the plurality of first error correction codes.

6. The memory system according to claim 1 , wherein the second error correction code is a Reed-Solomon code.

7. A method of controlling a nonvolatile memory, comprising:

generating a plurality of error detection codes to detect an error in a plurality of data items, respectively;

generating a plurality of first error correction codes to correct an error in a plurality of first data blocks, respectively, each of the plurality of first data blocks including one of the plurality of data items and one of the plurality of error detection codes corresponding thereto;

generating a second error correction code to correct an error in a second data block, the second data block including at least a part of each of the plurality of first data blocks; and

writing the plurality of data items, the plurality of error detection codes, the plurality of first error correction codes, and the second error correction code into the nonvolatile memory.

8. The method according to claim 7 , wherein each of the plurality of error detection codes is a cyclic redundancy check (CRC).

9. The method according to claim 7 , further comprising

storing each of the plurality of error detection codes in a memory.

10. The method according to claim 7 , further comprising

correcting, by using one of the plurality of first error correction codes, an error in one of the plurality of first data blocks read from the nonvolatile memory; and

determining, by using one of the plurality of error detection codes, whether the error in the one of the plurality of first data blocks has been corrected.

11. The method according to claim 10 , further comprising correcting, by using the second error correction code, an error in the second data block that includes at least a part of the one of the plurality of first data blocks that has been subject to the error correction by using the one of the plurality of first error correction codes.

12. The method according to claim 7 , wherein the second error correction code is a Reed-Solomon code.