Display device
A display device including an emitting element. A first transistor includes a first electrode electrically connected to a first supply voltage line, a second electrode electrically connected to the emitting element, and a gate electrode receiving a data signal, the first transistor being configured to transfer a driving current to the emitting element based on the data signal. A capacitor is connected between the gate electrode of the first transistor and the first supply voltage line. An electric field generating element is connected between the second electrode of the first transistor and the gate electrode of the first transistor and includes ferroelectrics.
1. A display device comprising:
a substrate;
a semiconductor layer disposed on the substrate, the semiconductor layer comprising a first region, a second region disposed on one side of the first region where a first electrode of a transistor is formed, and a third region disposed on another side of the first region where a second electrode of the transistor is formed;
a first insulating layer disposed on the semiconductor layer;
a first conductive layer disposed on the first insulating layer and comprising a gate electrode overlapping with the first region; and
a ferroelectric layer disposed on the first insulating layer and overlapping with at least a part of the second region of the semiconductor layer,
wherein the ferroelectric layer contacts upper and lateral side surfaces of the first conductive layer and a side surface, and not top and bottom surfaces, of at least the second electrode.
2. The display device of claim 1 , wherein the ferroelectric layer is in direct contact with the gate electrode and partially overlaps with the gate electrode.
3. The display device of claim 2 , wherein the ferroelectric layer overlaps with at least a part of the first region.
4. The display device of claim 1 , wherein the ferroelectric layer is in direct contact with the gate electrode and does not overlap with the gate electrode.
5. The display device of claim 4 , wherein the ferroelectric layer overlaps with at least a part of the first region.