Diode connected vertical transistor
An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region.
1. An electrical device comprising:
an electrically conductive surface region; and
a diode connected transistor device including:
a first diode source/drain region provided by the electrically conductive surface region at a first end of a vertically orientated channel, and
a gate electrode in direct contact with the first diode source/drain region.
2. The electrical device of claim 1 , wherein the diode connected transistor device comprises a second diode source/drain region that is present at a second end of the vertically orientated channel that is opposing the first end that is in contact with the first diode source/drain region.
3. The electrical device of claim 1 , wherein the vertically orientated channel is provided by a fin structure.
4. The electrical device of claim 3 , wherein the fin structure is comprised of a type IV semiconductor.
5. The electrical device of claim 3 , wherein the fin structure is comprised of a type III-V semiconductor.
6. The electrical device of claim 1 , wherein the electrical device is a current mirror.
7. The electrical device of claim 1 , wherein the electrical device is a comparator.
8. The electrical device of claim 1 , wherein the electrical device is a sense amplifier.
9. The electrical device of claim 3 , wherein the diode connected transistor device is a two terminal device.
10. The electrical device of claim 9 , wherein the two terminal device comprises a first terminal provided by the electrically conductive surface region that provides the first diode source/drain region, and a second terminal in direct electrical contact to a second diode source/drain region.
11. An electrical device comprising:
an electrically conductive surface region;
a first diode source/drain region provided by the electrically conductive surface region at a first end of a vertically orientated channel;
a diode gate electrode in direct contact with the first diode source/drain region; and
a second diode source/drain region at a second end of the vertically orientated channel.
12. The electrical device of claim 11 , wherein the vertically orientated channel is provided by a fin structure.
13. The electrical device of claim 12 , wherein the fin structure is comprised of a type IV semiconductor.
14. The electrical device of claim 12 , wherein the fin structure is comprised of a type III-V semiconductor.
15. The electrical device of claim 11 , wherein the electrical device is a current mirror.
16. The electrical device of claim 11 , wherein the electrical device is a comparator.
17. The electrical device of claim 11 , wherein the electrical device is a sense amplifier.
18. The electrical device of claim 11 , wherein the electrical device is a two terminal device.
19. The electrical device of claim 18 , wherein the two terminal device comprises a first terminal provided by the electrically conductive surface region that provides the first diode source/drain region, and a second terminal in direct contact to the second diode source/drain region.
20. The electrical device of claim 11 , further comprising a vertically orientated transistor including a channel region comprised of a channel fin structure.