Evaluation method and evaluation apparatus for electronic device

1. An evaluation method for an electronic device provided with an insulating film between a pair of electrode layers, the method comprising:

preparing a sample that has the insulating film;

irradiating the sample with electron beams from a plurality of angles to acquire a plurality of images; and

performing image processing using the plurality of images to reconstruct a stereoscopic image of the sample and generate a cross-sectional image of the sample from the stereoscopic image;

wherein, between the electrode layers, the sample further has a recording layer formed of a ferromagnetic material and a reference layer formed of a ferromagnetic material; and

wherein the insulating film is a tunnel barrier insulating film provided between the recording layer and the reference layer; and

wherein the electron beams from the plurality of angles irradiate the sample from directions horizontal to the tunnel barrier insulating film.

2. The evaluation method for the electronic device according to claim 1 , wherein each of the pair of electrode layers has a grain boundary, and the tunnel barrier insulating film has unevenness on the surface.

3. The evaluation method for the electronic device according to claim 1 , wherein at least one of a conductive foreign object that short-circuits the recording layer and the reference layer and an insulating foreign object that causes degradation in crystallinity of the tunnel barrier insulating film adheres to the sample.

4. The evaluation method for the electronic device according to claim 1 , wherein a horizontal cross-sectional image of the tunnel barrier insulating film is generated as the cross-sectional image.

5. The evaluation method for the electronic device according to claim 1 , wherein the plurality of images are acquired with a transmission electron microscope.

6. The evaluation method for the electronic device according to claim 5 , wherein a scanning transmission electron microscope is used as the transmission electron microscope.

7. The evaluation method for the electronic device according to claim 1 , wherein the cross-sectional image is generated using a tomography method.

8. The evaluation method for the electronic device according to claim 1 , the method further comprising performing element analysis on the sample irradiated with the electron beams, wherein an element mapping image is generated using a result of the element analysis.

9. The evaluation method for the electronic device according to claim 8 , wherein the element analysis is performed by energy dispersive X-ray spectroscopy.

10. The evaluation method for the electronic device according to claim 9 , wherein the element analysis is performed by electron energy loss spectroscopy.

11. The evaluation method for the electronic device according to claim 1 , wherein a damaged layer generated by etching is formed in the sample.

12. The evaluation method for the electronic device according to claim 1 , wherein an unevenness of each of interfaces of the sample, a foreign object adhering to an end of each of the interfaces of the sample, and etching damage generated in a patterning step are evaluated.

13. An evaluation apparatus for an electronic device provided with a lower electrode, a reference layer formed of a ferromagnetic material, a tunnel barrier insulating film, a recording layer formed of a ferromagnetic material, an upper electrode, stacked in this order, the apparatus comprising:

an electron source configured to output electron beams to a sample having the tunnel barrier insulating film from a plurality of angles;

an image acquisition unit configured to detect the electron beams transmitted through the sample to acquire a plurality of images; and

an image processing unit configured to reconstruct a stereoscopic image of the sample from the plurality of images and generates a cross-sectional image of the sample from the stereoscopic image; and

wherein the electron beams from the plurality of angles irradiate the sample from directions horizontal to the tunnel barrier insulating film.

14. The evaluation method for the electronic device according to claim 1 , the method further comprising performing element analysis on the sample irradiated with the electron beams,

wherein an element mapping image is generated using a result of the element analysis.

15. The evaluation method for the electronic device according to claim 1 , wherein an evaluating protective film is formed along the surface of the electronic device.