Semiconductor device including light-collimating layer
A semiconductor device is provided. The semiconductor device includes a substrate and a light-collimating layer. The substrate has a plurality of pixels. The light-collimating layer is disposed on the substrate, and the light-collimating layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.
1. A semiconductor device, comprising:
a substrate having a plurality of pixels; and
a light-collimating layer disposed on the substrate, comprising:
a transparent material layer covering and in direct contact with the pixels;
a first light-shielding layer disposed on the substrate and having a plurality of holes corresponding to the pixels;
a second light-shielding layer disposed on the first light-shielding layer, wherein the first light-shielding layer is disposed between the substrate and the second light-shielding layer; and
a plurality of transparent pillars disposed in the second light-shielding layer;
wherein the transparent material layer is disposed between the first light-shielding layer and the second light-shielding layer, the first light-shielding layer is formed of a first material, and the second light-shielding layer is formed of a second material that is different than the first material.
2. The semiconductor device of claim 1 , wherein the first material comprises a metal.
3. The semiconductor device of claim 1 , wherein the second material comprises a photoresist, an ink, a molding compound, a solder mask, an epoxy resin or a combination thereof.
4. The semiconductor device of claim 1 , wherein the first light-shielding layer is in direct contact with a top surface of the substrate.
5. The semiconductor device of claim 4 , wherein a width of one of the transparent pillars is larger than a width of one of the holes.
6. The semiconductor device of claim 1 , wherein a thickness of the first light-shielding layer is smaller than a thickness of the second light-shielding layer.
7. A semiconductor device, comprising:
a substrate having a plurality of pixels; and
a light-collimating layer disposed on the substrate, comprising:
a plurality of light-shielding layers disposed on the substrate, wherein each of the light-shielding layers has a plurality of holes corresponding to the pixels, a light-shielding layer among the light-shielding layers closest to the substrate is in direct contact with the substrate; and
a transparent material layer disposed between the light-shielding layers and filling the holes;
wherein a material of the light-shielding layer closest to the substrate comprises a metal, and materials of the other light-shielding layers comprise a photoresist, an ink, a molding compound, a solder mask, an epoxy resin or a combination thereof.
8. The semiconductor device of claim 7 , wherein a cross-sectional area of each hole of the light-shielding layer closest to the substrate is smaller than a cross-sectional area of each hole of the other light-shielding layers.
9. The semiconductor device of claim 7 , wherein thicknesses of the light-shielding layer are different from each other.
10. The semiconductor device of claim 7 , wherein cross-sectional areas of different light-shielding layers are different from each other.