Ultra-wideband light emitting diode and optical detector comprising indium gallium arsenide phosphide and method of fabricating the same

1. An optical source comprising:

a substrate;

a carrier confinement (CC) region positioned over the substrate, the CC region defining:

a first CC layer that is a wideband gap CC layer comprising at least one of indium gallium phosphide, aluminum gallium arsenide, and gallium arsenide phosphide;

a second CC layer positioned over the first CC layer, the second CC layer is a wideband gap CC layer comprising at least one of indium gallium phosphide and aluminum gallium arsenide;

and

an active region positioned over the CC region, wherein:

the active region comprises indium gallium arsenide;

the active region has an indium composition between 10% and 35%; and

the active region is configured to have a transient response time of less than 500 picoseconds (ps).

2. The optical source of claim 1 , wherein the active region is at least one of a quantum well structure and a multi quantum well structure.

3. The optical source of claim 2 , wherein the active region has a thickness between 50 and 150 angstroms for each quantum well.

4. The optical source of claim 3 , further comprising a first barrier layer positioned between the CC region and the active region, wherein the first barrier layer has a phosphorous composition between 25% and 80%.

5. The optical source of claim 4 , wherein the first barrier layer has a thickness between 25 and 75 angstroms.

6. The optical source of claim 5 , further comprising a second barrier layer positioned over the active region, wherein the second barrier layer has a phosphorous composition between 40% and 50%.

7. The optical source of claim 6 , wherein the second barrier layer has a thickness between 30 and 40 angstroms.

8. The optical source of claim 7 , further comprising:

an n-type contact layer positioned between the substrate and the CC region; and

a p-type contact layer positioned over the second barrier layer.

9. The optical source of claim 8 , wherein the first CC layer has an aluminium composition between 25% and 45%.

10. The optical source of claim 8 , wherein the first CC layer has an indium composition between 45% and 55%, and the second CC layer has a phosphorous composition between 25% and 80%.

11. The optical source of claim 10 , wherein the first CC layer has a thickness between 100 and 2000 angstroms and the second CC layer has a thickness between 25 and 75 angstroms.

12. The optical source of claim 10 , wherein the CC region further defines:

a third CC layer positioned over the second CC layer, the third CC layer comprising indium gallium phosphide; and

a fourth CC layer positioned over the third CC layer, the fourth CC layer comprising gallium arsenide phosphide.

13. The optical source of claim 12 , wherein the third CC layer has an indium composition between 45% and 55%, and the fourth CC layer has a phosphorous composition between 25% and 80%.

14. The optical source of claim 13 , wherein the first CC layer, the second CC layer, the third CC layer, and the fourth CC layer each have a thickness between 25 and 75 angstroms.

15. The optical source of claim 12 , wherein the CC region further defines:

a fifth CC layer positioned over the fourth CC layer, the fifth CC layer comprising indium gallium phosphide; and

a sixth CC layer positioned over the fifth CC layer, the sixth CC layer comprising gallium arsenide phosphide.

16. The optical source of claim 15 , wherein:

the third CC layer and the fifth CC layer each have an indium composition between 45% and 55%; and

the fourth CC layer and the sixth CC layer each have a phosphorous composition between 25% and 80%.

17. The optical source of claim 16 , wherein the first CC layer, the second CC layer, the third CC layer, the fourth CC layer, the fifth CC layer, and the sixth CC layer each have a thickness between 25 and 75 angstroms.

18. The optical source of claim 17 , wherein:

the n-type contact layer and the p-type contact layer each comprise gallium arsenide;

the n-type contact layer has a thickness between 5000 and 20000 angstroms; and

the p-type contact layer has a thickness between 500 and 5000 angstroms.

19. The optical source of claim 1 , wherein the optical source is implemented in a flip-chip package.

20. The optical source of claim 1 , wherein the optical source is implemented within an optical transceiver and the optical transceiver further comprises an optical detector.

21. The optical source of claim 1 , wherein:

the optical source is configured to transmit at a first wavelength;

the optical source is a first optical source within an array of optical sources; and

a second optical source within the array of optical sources is configured to operate at a second wavelength.

22. The optical source of claim 21 , wherein:

the array of optical sources is implemented within an optical transceiver;

the optical transceiver further comprises an array of optical detectors;

a first optical detector within the array of optical detectors is configured to receive at the first wavelength; and

a second optical detector within the array of optical detectors is configured to receive at the second wavelength.

23. The optical source of claim 22 , wherein the optical source is implemented in a flip-chip package.

24. The optical source of claim 22 , wherein the first optical detector and the second optical detector are implemented within a first epitaxial structure.

25. The optical source of claim 21 , wherein the optical source is implemented in a flip-chip package.

26. The optical source of claim 1 , wherein the optical source is configured for variable wavelength modulation.

27. The optical source of claim 26 , wherein the optical source is implemented in a flip-chip package.

28. The optical source of claim 1 , wherein the optical source is implemented within an epitaxial structure and the epitaxial structure further comprises an optical detector.

29. The optical source of claim 1 further comprising an electron blocking layer (EBL) positioned over the active region, wherein the EBL is a wide band gap EBL comprising aluminum gallium arsenide.

30. The optical source of claim 29 , wherein the electron blocking layer has an aluminium composition between 25% and 45%.

31. The optical source of claim 1 , wherein the optical source is a light-emitting-diode (LED).

32. A method of forming an optical source, comprising:

providing an epitaxial structure on a substrate, the epitaxial structure comprising:

a carrier confinement (CC) region positioned over the substrate, the CC region defining:

a first CC layer that is a wideband gap CC layer comprising at least one of indium gallium phosphide and aluminum gallium arsenide; and

a second CC layer positioned on the first CC layer, the second CC layer is a wideband gap CC layer comprising at least one of indium gallium phosphide, aluminum gallium arsenide, and gallium arsenide phosphide;

and

an active region over the CC region, wherein:

the active region comprises indium gallium arsenide;

the active region has an indium composition between 10% and 35%; and

the active region is configured to have a transient response time of less than 500 picoseconds (ps).