Selective dielectric deposition
Methods, apparatuses, and systems related to selectively depositing a liner material on a sidewall of an opening are described. An example method includes forming a liner material on a dielectric material of sidewalls of an opening and a bottom surface of an opening and removing the first liner material of the sidewalls of the opening and the bottom surface of the opening using a non-selective etch chemistry. The example method further includes forming a second liner material on the dielectric material of the sidewalls of the opening to avoid contact with the bottom surface of the opening.
1. A method, comprising:
forming a first liner material on a dielectric material on sidewalls of an opening and a bottom surface of the opening;
removing the first liner material from the dielectric material on the sidewalls of the opening, and both the first liner material and the dielectric material from the bottom surface of the opening using a non-selective etch chemistry, wherein removing the first liner material from the dielectric material on the sidewalls exposes the dielectric material on the sidewalls; and
forming a second liner material on the dielectric material on the sidewalls of the opening to avoid contact with the bottom surface of the opening.
2. The method of claim 1 , further comprising forming the first liner material out of a nitride.
3. The method of claim 1 , further comprising forming the first liner material and the second liner material on a laminate dielectric material on the sidewalls.
4. The method of claim 3 , further comprising forming the laminate dielectric material out of a plurality of layers of the dielectric material on the sidewalls.
5. The method of claim 4 , further comprising:
forming a first layer of the laminate dielectric material out of a low dielectric constant (k) material;
forming a second layer of the laminate dielectric material out of an oxide; and
forming a third layer of the laminate dielectric material out of a nitride.
6. The method of claim 4 , further comprising forming:
a first layer of the laminate dielectric material out of a first nitride;
a second layer of the laminate dielectric material out of an oxide; and
a third layer of the laminate dielectric material out of a second nitride.
7. The method of claim 4 , further comprising forming a third layer of the laminate dielectric material on a first layer of the dielectric laminate material, a second layer of the dielectric laminate material, and the bottom surface of the opening.
8. The method of claim 4 , further comprising forming the laminate dielectric material to have a lower k than a dielectric material made of a solid nitride.
9. The method of claim 4 , further comprising determining a k of the laminate dielectric material by averaging a k of the layers of the laminate dielectric material.
10. A method, comprising:
depositing a first liner material on a multilayer dielectric material on sidewalls of an opening and a layer of the multilayer dielectric material on a bottom surface of the opening;
etching the first liner material and the multilayer dielectric material utilizing a non-selective etch chemistry, to remove the first liner material from the multilayer dielectric material on the sidewalls of the opening and remove the first liner material and the layer of the multilayer dielectric material from the bottom surface of the opening; and
depositing a second liner material on the multilayer dielectric material on the sidewalls of the opening to avoid depositing the second liner material on the bottom surface of the opening.
11. The method of claim 10 , further comprising etching the first liner material using a plasma etch.
12. The method of claim 10 , further comprising performing an additional etch to remove a remaining portion of the layer of the multilayer dielectric material from the bottom surface of the opening.
13. The method of claim 12 , wherein the additional etch causes less damage to the second liner material than the etch to remove both the layer of the multilayer dielectric material and the first liner material from the bottom surface of the opening.
14. A method, comprising:
depositing a first liner material on a multilayer dielectric material on sidewalls of an opening and a layer of the multilayer dielectric material on a bottom surface of the opening;
performing a first etch on the first liner material and the layer of the multilayer dielectric material to remove the first liner material from the multilayer dielectric material on the sidewalls of the opening and to remove the first liner material and the layer of the multilayer dielectric material from the bottom surface of the opening; and
selectively depositing a second liner material on the multilayer dielectric material on the sidewalls of the opening to avoid contact with the bottom surface of the opening, wherein the bottom surface of the opening is conductive.
15. The method of claim 14 , further comprising forming the second liner material to create a perpendicular geometry to the bottom surface.
16. The method of claim 14 , further comprising forming the second liner material out of a dielectric material that can selectively deposit on other dielectric material but not on conductive material.
17. The method of claim 14 , further comprising forming the second liner material out of a different nitride than the multilayer dielectric material on the sidewalls of the opening.
18. The method of claim 14 , further comprising performing a second etch that causes less damage to the second liner material than the first etch to remove a remaining portion of the layer of the multilayer dielectric material from the bottom surface of the opening.