Current sensor for compensation of on-die temperature gradient
A sensor is provided comprising: a substrate having a first region and a second region; a first series of first magnetoresistive (MR) elements formed on the substrate, the first series of first MR elements including at least two first MR elements; a second series of second MR elements formed on the substrate, the second series of second MR elements being electrically coupled to the first series of MR elements to form a bridge circuit, the second series of MR elements including at least two second MR elements, each of the second MR elements having a different pinning direction than at least one of the first MR elements, wherein one of the first MR elements and one of the second MR elements are formed in the first region of the substrate and have different pinning directions.
1. A sensor comprising:
a substrate having a first region and a second region;
a first series of first magnetoresistive (MR) elements formed on the substrate, the first series of first MR elements including at least two first MR elements; and
a second series of second MR elements that is coupled in parallel with the first series of first MR elements to form a bridge circuit, the second series of second MR elements being formed on the substrate, the second series of second MR elements including at least two second MR elements, each of the at least two second MR elements having a different pinning direction than either of the at least two first MR elements,
wherein one of the at least two first MR elements and one of the at least two second MR elements are formed in the first region of the substrate and have different pinning directions,
wherein another one of the at least two first MR elements and another one of the at least two second MR elements are formed in the second region of the substrate and have different pinning directions,
wherein a first output node of the bridge circuit is coupled between the at least two first MR elements, and a second output node of the bridge circuit is coupled between the at least two second MR elements, and
wherein the first region and the second region are spaced apart from one another by a distance that is greater than a distance between the first and second MR elements in the first region.
2. The sensor of claim 1 , further comprising a body arranged to encapsulate the substrate, the first series of first MR elements, and the second series of second MR elements.
3. The sensor of claim 1 , wherein:
the first series of first MR elements includes an upper first MR element and a lower first MR element, the lower first MR element being electrically coupled to a voltage supply terminal of the sensor via the upper first MR element,
the second series of second MR elements includes an upper second MR element and a lower second MR element, the lower second MR element being electrically coupled to the voltage supply terminal of the sensor via the upper second MR element, and
the upper first MR element and the upper second MR element are formed in the first region of the substrate, and the lower first MR element and the lower second MR element are formed in the second region of the substrate.
4. The sensor of claim 1 , wherein at least one of the first MR elements includes a giant magnetoresistance (GMR) element, and at least one of the second MR elements includes a giant magnetoresistance (GMR) element.
5. The sensor of claim 1 , wherein at least one of the first MR elements includes a tunnel magnetoresistance (TMR) element, and at least one of the second MR elements includes a tunnel magnetoresistance (TMR) element.
6. A sensor comprising:
a substrate having a first region and a second region;
a first series of first magnetoresistive (MR) elements formed on the substrate;
a second series of second MR elements formed on the substrate, the second series of second MR elements being coupled in parallel to the first series of MR elements to form a bridge circuit; and
a body arranged to encapsulate the substrate, the first series of first MR elements, and the second series of second MR elements,
wherein one of the first MR elements and one of the second MR elements are formed in the first region of the substrate and have different pinning directions,
wherein another one of the first MR elements and another one of the second MR elements are formed in the second region of the substrate and have different pinning directions,
wherein the first region and the second region are spaced apart from one another by a distance that is greater than a distance between the first and second MR elements in the first region, and
wherein a first output node of the bridge circuit is coupled between at least two of the first MR elements and a second output node of the bridge circuit is coupled between at least two of the second MR elements.
7. The sensor of claim 6 , further comprising:
a first leadframe extending from the body, the first leadframe being electrically coupled to a first output voltage terminal of the bridge circuit; and
a second leadframe extending from the body, the second leadframe being electrically coupled to a second output voltage terminal of the bridge circuit.
8. The sensor of claim 6 , wherein:
the first series of first MR elements includes an upper first MR element and a lower first MR element, the lower first MR element being electrically coupled to a voltage supply terminal of the sensor via the upper first MR element,
the second series of second MR elements includes an upper second MR element and a lower second MR element, the lower second MR element being electrically coupled to the voltage supply terminal of the sensor via the upper second MR element, and
the upper first MR element and the upper second MR element are formed in the first region of the substrate, and the lower first MR element and the lower second MR element are formed in the second region of the substrate.
9. The sensor of claim 6 , wherein at least one of the first MR elements includes a giant magnetoresistance (GMR) element, and at least one of the second MR elements includes a giant magnetoresistance (GMR) element.
10. The sensor of claim 6 , wherein at least one of the first MR elements includes a tunnel magnetoresistance (TMR) element, and at least one of the second MR elements includes a tunnel magnetoresistance (TMR) element.
11. A sensor comprising:
a substrate having a first region and a second region;
a first series of first magnetoresistive (MR) elements formed on the substrate, the first series of first MR elements including two first pairs of first MR elements, each first pair of first MR elements including first MR elements that have opposite pinning directions, such that the first MR elements in each of the first pairs are formed in different ones of the first region and the second region of the substrate; and
a second series of second MR elements formed on the substrate, the second series of second MR elements including two second pairs of second MR elements, each second pair of second MR elements including second MR elements that have opposite pinning directions, such that the second MR elements in each of the second pairs are formed in different ones of the first region and the second region of the substrate,
wherein, the first MR elements formed in the first region of the substrate have different pinning directions and are part of different first pairs of first MR elements, the second MR elements formed in the first region of the substrate have different pinning directions and are part of different second pairs of second MR elements;
wherein the first pairs are coupled in parallel with the second pairs to form a full bridge circuit, such that each of the first pairs and the second pairs is part of a different leg of the bridge circuit, and
wherein a first output node of the bridge circuit is coupled between the two first pairs of first MR elements and a second output node of the bridge circuit is coupled between the two second pairs of second MR elements.
12. The sensor of claim 11 , further comprising a body arranged to encapsulate the substrate, the first series of first MR elements, and the second series of second MR elements.
13. The sensor of claim 11 , wherein at least one of the first MR elements includes a giant magnetoresistance (GMR) element, and at least one of the second MR elements includes a giant magnetoresistance (GMR) element.
14. The sensor of claim 11 , wherein at least one of the first MR elements includes a tunnel magnetoresistance (TMR) element, and at least one of the second MR elements includes a tunnel magnetoresistance (TMR) element.
15. The sensor of claim 11 , wherein:
the first MR elements formed in the second region of the substrate have different pinning directions and are part of different first pairs of first MR elements, and
the second MR elements formed in the second region of the substrate have different pinning directions and are part of different second pairs of second MR elements.