Nitride semiconductor light emitting element
A nitride semiconductor light emitting element configured to emit deep ultraviolet light, the light emitting element comprises: an n-side contact layer comprising Al, Ga, and N; and an n-electrode disposed on the contact layer, wherein the n-electrode comprises, successively from the n-side contact layer side, a first layer consisting essentially of Ti, a second layer consisting essentially of a Si-containing Al alloy, and a third layer comprising at least one of a layer consisting essentially of Ta and/or a layer consisting essentially of W.
1. A nitride semiconductor light emitting element configured to emit deep ultraviolet light, the light emitting element comprising:
an n-side contact layer comprising aluminum (Al), gallium (Ga), and nitrogen (N); and
an n-electrode located on the n-side contact layer, wherein the n-electrode comprises a first layer located above the n-side contact layer and consisting essentially of titanium (Ti), a second layer located above the first layer and consisting essentially of a silicon (Si)-containing Al alloy, and a third layer located above the second layer and comprising at least one of a layer consisting essentially of tantalum (Ta) and/or a layer consisting essentially of tungsten (W).
2. The nitride semiconductor light emitting element according to claim 1 , wherein the n-side contact layer consists essentially of Al x Ga 1-x N (0.5≤x≤1).
3. The nitride semiconductor light emitting element according to claim 2 , wherein a thickness of the Ti layer is at least 20 nm, and at most 30 nm.
4. The nitride semiconductor light emitting element according to claim 3 , wherein the second layer contains 10 percent by mass to 25 percent by mass of Si relative to a sum of Al and Si.
5. The nitride semiconductor light emitting element according to claim 2 , wherein the second layer contains 10 percent by mass to 25 percent by mass of Si relative to a sum of Al and Si.
6. The nitride semiconductor light emitting element according to claim 1 , wherein a thickness of the Ti layer is at least 20 nm, and at most 30 nm.
7. The nitride semiconductor light emitting element according to claim 6 , wherein the second layer contains 10 percent by mass to 25 percent by mass of Si relative to a sum of Al and Si.
8. The nitride semiconductor light emitting element according to claim 6 , wherein a thickness of the layer consisting essentially of Ta layer or the layer consisting essentially of W is at least 300 nm, and at most 500 nm.
9. The nitride semiconductor light emitting element according to claim 6 , further comprising a fourth layer located above the third layer, the fourth layer comprising at least one of a layer consisting essentially of Ti layer and a layer consisting essentially of ruthenium (Ru).
10. The nitride semiconductor light emitting element according to claim 1 , wherein the second layer contains 10 percent by mass to 25 percent by mass of Si relative to a sum of Al and Si.
11. The nitride semiconductor light emitting element according to claim 10 , wherein a thickness of the layer consisting essentially of Ta layer or the layer consisting essentially of W is at least 300 nm, and at most 500 nm.
12. The nitride semiconductor light emitting element according to claim 10 , further comprising a fourth layer located above the third layer, the fourth layer comprising at least one of a layer consisting essentially of Ti layer and a layer consisting essentially of ruthenium (Ru).
13. The nitride semiconductor light emitting element according to claim 1 , wherein a thickness of the layer consisting essentially of Ta layer or the layer consisting essentially of W is at least 300 nm, and at most 500 nm.
14. The nitride semiconductor light emitting element according to claim 13 , further comprising a fourth layer located above the third layer, the fourth layer comprising at least one of a layer consisting essentially of Ti layer and a layer consisting essentially of ruthenium (Ru).
15. The nitride semiconductor light emitting element according to claim 1 , further comprising a fourth layer located above the third layer, the fourth layer comprising at least one of a layer consisting essentially of Ti layer and a layer consisting essentially of ruthenium (Ru).