Method of fabricating a SiC resonator
A method of making a SiC resonator includes forming a layer of an oxide material on a relatively thick wafer of SiC; bonding the layer of oxide material on the relatively thick wafer of SiC to a handle wafer having at least an oxide exterior surface, the resulting bond being substantially free of voids; planarizing the relatively thick wafer of SiC to a desired thickness; forming top and bottom electrodes on the wafer of SiC wafer to define a SiC wafer resonator portion; and forming a trench around the top and bottom electrodes, the tench completely penetrating the planarized wafer of SiC around a majority of a distance surrounding said top and bottom electrodes, except for one or more tether regions of the planarized wafer of SiC which remain physically coupled a remaining portion the SiC wafer resonator portion which defines a frame formed of the planarized wafer of SiC surrounding the SiC wafer resonator portion.
1. A method for making a resonator comprising:
providing a silicon carbide wafer having a first side and a second side;
forming a first electrode on the first side of the silicon carbide wafer;
forming a first oxide on the first electrode and the first side of the silicon carbide wafer;
providing an oxidized silicon handle wafer having a surface made of a second oxide;
forming a bond between the first and second oxides, thereby bonding the silicon carbide wafer to the silicon handle wafer;
forming a second electrode on the second side of the silicon carbide wafer;
forming a resonator body, a frame, and tethers from the silicon carbide wafer;
releasing the resonator body by removing at least part of the first oxide; and
wherein the resonator body has a first side opposite a second side, and wherein the first electrode is on the first side of the resonator body, and wherein the second electrode is on the second side of the resonator body.
2. The method of claim 1 , wherein the step of releasing the resonator body comprises:
etching trenches into the second side of the silicon carbide wafer to expose the first oxide.
3. The method of claim 1 , wherein the step of forming the first oxide further comprises:
covering the first electrode with the first oxide; and
chemical mechanical polishing a surface of the first oxide to form a polished surface of the first oxide.
4. A method for making a resonator comprising:
providing a silicon carbide wafer having a first side and a second side;
forming a first electrode on the first side of the silicon carbide wafer;
forming a first oxide on the first electrode and the first side of the silicon carbide wafer;
providing an oxidized silicon handle wafer having a surface made of a second oxide;
forming a bond between the first and second oxides, thereby bonding the silicon carbide wafer to the silicon handle wafer;
forming a second electrode on the second side of the silicon carbide wafer, the silicon carbide wafer being thinned before forming the second electrode;
forming a resonator body, a frame, and tethers from the silicon carbide wafer;
releasing the resonator body by removing at least part of the first oxide.
5. The method of claim 4 , wherein the step of thinning the silicon carbide wafer comprises:
lapping and polishing the silicon carbide wafer.
6. A method for making a resonator comprising:
providing a silicon carbide wafer having a first side and a second side;
forming a first electrode on the first side of the silicon carbide wafer;
forming a first oxide on the first electrode and the first side of the silicon carbide wafer;
providing an oxidized silicon handle wafer having a surface made of a second oxide;
forming a bond between the first and second oxides, thereby bonding the silicon carbide wafer to the silicon handle wafer;
forming a second electrode on the second side of the silicon carbide wafer;
forming a resonator body, a frame, and tethers from the silicon carbide wafer;
releasing the resonator body by removing at least part of the first oxide;
forming an etch stop on the first side of the silicon carbide wafer before the step of forming the first electrode,
wherein the step of forming the first electrode comprises:
forming the first electrode on the etch stop and the first side of the silicon carbide wafer.
7. The method of claim 6 , further comprising:
forming a metallized via in the silicon carbide wafer from the first side of the silicon carbide wafer to the etch stop, wherein the metallized via is electrically connected to the etch stop, and wherein the etch stop is electrically connected to the first electrode.
8. The method of claim 1 , wherein the second electrode comprises first top electrodes and second top electrodes, wherein the first top electrodes are interleaved between the second top electrodes.
9. The method of claim 1 , wherein the first side is opposite the second side.
10. The method of claim 4 , wherein the resonator body has a first side opposite a second side, and wherein the first electrode is on the first side of the resonator body, and wherein the second electrode is on the second side of the resonator body.
11. The method of claim 1 , wherein the step of forming the first oxide comprises depositing the first oxide via a plasma enhanced chemical vapor deposition of the first oxide.
12. The method of claim 11 , further comprising planarizing a surface of the first oxide before the step of forming the bond.
13. The method of claim 4 , wherein the step of thinning the silicon carbide wafer comprises thinning the silicon carbide wafer to a thickness of less than 10 micrometers.
14. The method of claim 1 , wherein the first oxide comprises silicon dioxide, and wherein the second oxide comprises silicon dioxide.
15. The method of claim 1 , wherein the step of forming the resonator body, the frame, and the tethers comprises etching into the second side of the silicon carbide wafer to the first oxide.
16. The method of claim 1 , wherein the step of releasing the resonator body comprises etching at least part of the first oxide located between the resonator body and the silicon wafer.
17. The method of claim 3 , wherein the step of forming the bond between the first and second oxides comprises forming the bond between the polished surface of the first oxide and the second oxide.
18. A method for making a resonator comprising:
providing a silicon carbide wafer having a first side and a second side;
forming a first electrode on the first side of the silicon carbide wafer;
forming a first oxide on the first electrode and the first side of the silicon carbide wafer;
providing an oxidized silicon handle wafer having a surface made of a second oxide;
forming a bond between the first and second oxides, thereby bonding the silicon carbide wafer to the silicon handle wafer;
forming a second electrode on the second side of the silicon carbide wafer;
forming a resonator body, a frame, and tethers from the silicon carbide wafer;
releasing the resonator body by removing at least part of the first oxide; and
wherein the silicon carbide wafer is a 4H or 6H silicon carbide wafer.
19. The method of claim 18 , wherein the silicon carbide wafer is a 6H silicon carbide wafer.