Semiconductor devices having conductive vias and methods of forming the same
Semiconductor devices having a conductive via and methods of forming the same are described herein. As an example, a semiconductor devices may include a conductive via formed in a substrate material, a barrier material, a first dielectric material on the barrier material, a coupling material formed on the substrate material and on at least a portion of the dielectric material, a second dielectric material formed on the coupling material, and an interconnect formed on the conductive via.
1. A method of forming a semiconductor device, the method comprising:
forming a conductive via in a substrate material, the conductive via comprising a conductive core material, a conductive barrier material formed on the conductive core material, and a first dielectric material formed on the conductive barrier material;
performing a reveal process to expose a portion of the first dielectric material;
removing a portion of the exposed portion of the first dielectric material such that a portion of the conductive barrier material is exposed;
forming a barrier material oxide on the exposed portion of the conductive barrier material by forming a silane coupling material on the exposed portion of the conductive barrier material, wherein the silane coupling material is also formed on at least a portion of the substrate material;
removing the barrier material oxide and the silane coupling material formed on the exposed portion of the conductive barrier material;
forming a second dielectric material on the silane coupling material formed on the at least a portion of the substrate material after removing the silane coupling material; and
forming an interconnect on the exposed portion of the conductive barrier material and on at least a portion of the second dielectric material.
2. The method of claim 1 , including performing a bake process subsequent to forming the silane coupling material on the exposed portion of the conductive barrier material.
3. The method of claim 1 , wherein the conductive barrier material is a metal and the barrier material oxide is a metal oxide.
4. The method of claim 1 , wherein the second dielectric material is a spin on dielectric material.
5. The method of claim 1 , including removing the silane coupling material and the barrier material oxide via a hydrofluoric acid.
6. The method of claim 1 , further comprising not performing a chemical mechanical planarization process subsequent to performing the reveal process.
7. The method of claim 1 , wherein forming the barrier material oxide comprises forming a barrier material oxide having a Pilling Bedworth ratio of at least 2.0.
8. The method of claim 7 , wherein the conductive barrier material comprises tantalum, and wherein the barrier material oxide comprises tantalum oxide.
9. A method of forming a semiconductor device, the method comprising:
forming a conductive via in a substrate material, the conductive via comprising a conductive core material, a conductive barrier material formed on the conductive core material, and a first dielectric material formed on the conductive barrier material;
performing a reveal process to expose a portion of the first dielectric material;
performing an etch to remove a portion of the exposed portion of the first dielectric material to expose a portion of the conductive barrier material;
depositing a coupling material on a surface of the substrate material and on the exposed portion of the conductive barrier material;
performing a curing process on the coupling material to form a barrier material oxide on the exposed portion of the conductive barrier material;
performing a wet etch process to remove the barrier material oxide and the coupling material formed on the exposed portion of the barrier material, wherein the cured coupling material remains on the surface of the substrate material subsequent to the wet etch process;
forming a second dielectric material on the cured coupling material remaining on the surface of the substrate material; and
forming an interconnect on the exposed portion of the conductive barrier material and on at least a portion of the second dielectric material.
10. The method of claim 9 , including performing the curing process at a temperature of 100° C. to 350° C.
11. The method of claim 9 , wherein the coupling material is formed from a compound represented by a formula: (XO) 3 Si(CH 2 ) n Y, wherein XO is a hydrolyzable alkoxy group, n is an integer from 1 to 10, and Y is an organofunctional group.
12. The method of claim 9 , wherein the method includes forming the semiconductor device without performing a chemical vapor deposition process subsequent to performing the reveal process.
13. The method of claim 9 , wherein the conductive barrier material comprises tantalum and the conductive core material comprises copper.