Optoelectronic component and method for producing an optoelectronic component
The invention relates to an optoelectronic component comprising at least one optoelectronic semiconductor chip which is designed to generate or detect electromagnetic radiation, a carrier on which the semiconductor chip is arranged, a first encapsulation body into which the optoelectronic semiconductor chip is embedded, and a second encapsulation body, wherein the first encapsulation body has a first thickness above the semiconductor chip and has a second thickness laterally spaced from the semiconductor chip, the first thickness is less than the second thickness, a third thickness of the first encapsulation body between the first thickness and the second thickness is minimal, and the second encapsulation body is arranged on the first encapsulation body.
1. Optoelectronic component comprising
at least one optoelectronic semiconductor chip which is designed to generate or detect electromagnetic radiation,
a carrier on which the optoelectronic semiconductor chip is arranged,
a first encapsulation body into which the optoelectronic semiconductor chip is embedded, and
a second encapsulation body, wherein
the first encapsulation body has a first thickness above the optoelectronic semiconductor chip and has a second thickness laterally spaced from the optoelectronic semiconductor chip,
the first thickness is less than the second thickness,
a third thickness of the first encapsulation body between the first thickness and the second thickness is minimal, and wherein the third thickness is less than a thickness of the optoelectronic semiconductor chip, and
the second encapsulation body is arranged on the first encapsulation body.
2. The optoelectronic component according to claim 1 , wherein the first encapsulation body has a concavely or convexly shaped outer surface above the semiconductor chip.
3. The optoelectronic component according to claim 1 , wherein the second encapsulation body is in direct contact with the first encapsulation body in regions.
4. The optoelectronic component according to claim 1 , wherein a refractive index of the first encapsulation body is different from the refractive index of the second encapsulation body.
5. The optoelectronic component according to claim 1 , wherein the second encapsulation body has a first thickness above the semiconductor chip and has a second thickness laterally spaced from the semiconductor chip, wherein the first thickness is greater than or less than the second thickness, and a third thickness of the second encapsulation body between the first thickness and the second thickness is maximal.
6. The optoelectronic component according to claim 1 , wherein the second encapsulation body has a concavely or convexly shaped outer surface above the semiconductor chip.
7. The optoelectronic component according to claim 1 , wherein the first encapsulation body and the second encapsulation body form an optical lens above the semiconductor chip.
8. The optoelectronic component according to claim 1 , wherein a reflector layer is arranged in regions between the first encapsulation body and the second encapsulation body in the region of the second thickness.
9. The optoelectronic component according to claim 8 , wherein the reflector layer comprises metal.
10. The optoelectronic component according to claim 8 , wherein the reflector layer is designed to reflect the electromagnetic radiation emitted or to be detected during operation of the optoelectronic semiconductor chip.
11. The optoelectronic component according to claim 1 , wherein the first encapsulation body has a shape formed of three convex regions above the optoelectronic semiconductor chip.
12. Method for producing an optoelectronic component according to claim 1 , comprising:
providing the carrier,
applying the optoelectronic semiconductor chip to the carrier,
applying the first encapsulation body to the carrier and to the optoelectronic semiconductor chip, and
applying the second encapsulation body to the first encapsulation body by means of a casting process.
13. The method according to claim 12 , wherein a reflector layer is applied in regions to the first encapsulation body before applying the second encapsulation body.
14. The method according to claim 12 , wherein a reflector layer is applied by means of electroplating.
15. Optoelectronic component comprising
at least one optoelectronic semiconductor chip which is designed to generate or detect electromagnetic radiation,
a carrier on which the optoelectronic semiconductor chip is arranged,
a first encapsulation body into which the optoelectronic semiconductor chip is embedded, and
a second encapsulation body, wherein
the first encapsulation body has a first thickness above the optoelectronic semiconductor chip and has a second thickness laterally spaced from the optoelectronic semiconductor chip,
the first thickness is less than the second thickness,
a third thickness of the first encapsulation body between the first thickness and the second thickness is minimal, and
the second encapsulation body is arranged on the first encapsulation body, wherein the third thickness of the first encapsulation body is less than a thickness of the optoelectronic semiconductor chip and wherein the third thickness is greater than zero.