Wafer susceptor apparatus with thermal insulation and method for manufacturing the same
A plate for supporting wafer has a top for carrying a wafer and a bottom coupled to a pedestal. The plate includes multiple heating units embedded within the plate and at least one set of grooves formed between the top and the bottom of the plate at a radial location between two of neighboring heating units to thereby enhance heat insulation among the heating units.
1. A wafer susceptor, having a plate with a top for carrying the wafer and a pedestal coupled to a bottom of the plate, characterized in that, the plate comprising:
plural heating units embedded between the top and bottom of the plate, the heating units are respectively positioned at different radial regions of the plate to define plural heating zones of the plate; and
at least one set of trenches formed on a radial position between the top and bottom of the plate, and between two of neighboring heating units to enhance thermal insulation for the heating zones,
wherein the at least one set of trenches includes a first trench and a pair of second trenches, the first trench is sealed in the plate and extends between the top and bottom of the plate, the pair of second trenches extend inward from the bottom of the plate, and the first trench is disposed between the pair of second trenches.
2. The wafer susceptor as claimed in claim 1 , wherein the at least one set of trenches includes at least one trench extending inward from the bottom of the plate.
3. The wafer susceptor as claimed in claim 1 , wherein the at least one set of trenches includes a trench sealed in the plate and extending between the top and bottom of the plate.
4. The wafer susceptor as claimed in claim 1 , wherein the plate further comprising: an electrode distributed between the top and the at least one set of trenches of the plate.
5. A method for manufacturing a wafer susceptor, comprising:
preparing plural layers;
performing a stamping process to a part of the layers to form at least one slit pattern on each of the part of the layers;
performing a metallization process to form at least one metal pattern onto each of the part of the layers; and
performing a stacking process to stack the layers in a predetermined order to form a plate of the wafer susceptor, wherein the slit patterns of the part of layers correspond to each other to thereby form at least one set of trenches in the plate, wherein the at least one set of trenches includes a first trench and a pair of second trenches, the first trench is sealed in the plate and extends between the top and bottom of the plate, the pair of second trenches extend inward from the bottom of the plate, and the first trench is disposed between the pair of second trenches.
6. The method as claimed in claim 5 , wherein the at least one slit patter is an arc-shaped pattern defined by a slit.
7. The method as claimed in claim 5 , wherein, in the stamping process, each of a first part of the layers has three slit patterns formed thereon, and each of a second part of the layers has two slit patterns formed thereon.