Method for ion mass separation and ion energy control in process plasmas
Plasma ion energy distribution for ions having different masses is controlled by controlling the relationship between a base RF frequency and a harmonic RF frequency. By the controlling the RF power frequencies, characteristics of the plasma process may be changed based on ion mass. The ions that dominate etching may be selectively based upon whether an ion is lighter or heavier than other ions. Similarly, atomic layer etch processes may be controlled such that the process may be switched between a layer modification step and a layer etch step though adjustment of the RF frequencies. Such switching is capable of being performed within the same gas phase of the plasma process. The control of the RF power includes controlling the phase difference and/or amplitude ratios between a base RF frequency and a harmonic frequency based upon the detection of one or more electrical characteristics within the plasma apparatus.
1. A method for plasma processing a substrate, comprising:
providing a process chamber;
coupling one or more RF sources to the process chamber to provide RF power to the process chamber through at least a base frequency voltage at a base frequency and a second frequency voltage at a second frequency, the second frequency being a second harmonic frequency or higher harmonic of the base frequency;
providing at least a first type of ion and a second type of ion in the process chamber, the first type of ion having a first mass and the second type of ion having a second mass, the first mass and the second mass being differing masses; and
controlling an ion energy distribution of the first type of ion or the second type of ion by adjusting a relationship between the base frequency voltage and the second frequency voltage so as to allow selective control of the ion energy distribution based upon the first mass and the second mass, the ion energy distribution having at least two peaks for the second type of ion, a first peak at lower energies than at least one peak for the first type of ion and a second peak at higher energies than the at least one peak for the first type of ion, the controlling the ion energy distribution is used to enhance the second peak of the second type of ion.
2. The method of claim 1 , the adjusting comprising adjusting a phase difference between the base frequency voltage and the second frequency voltage and/or an amplitude ratio of the base frequency voltage and the second frequency voltage.
3. The method of claim 2 , the adjusting comprising adjusting a phase difference between the base frequency voltage and the second frequency voltage.
4. The method of claim 2 , the plasma processing being a plasma etching process, wherein the controlling the ion energy distribution provides selective control of an etch impact of the first type of ion or the second type of ion based upon the first mass and the second mass being different.
5. The method of claim 4 , wherein the plasma etching process is an atomic layer etch process, and the controlling the ion energy distribution selectively controls a layer modification step or a layer etch step of the atomic layer etch process.
6. A method for plasma etching a substrate, comprising:
providing a process chamber;
coupling one or more RF sources to the process chamber to provide RF power to the process chamber through at least a base frequency voltage at a base frequency and a second frequency voltage at a second frequency, the second frequency being a second harmonic frequency or higher of the base frequency;
providing at least a first type of ion and a second type of ion in the process chamber, the first type of ion having a first mass and the second type of ion having a second mass, the first mass and the second mass being differing masses; and
controlling an ion energy distribution of the first type of ion or the second type of ion by adjusting a relationship between the base frequency voltage and the second frequency voltage so as to allow selective control of the ion energy distribution based upon the first mass and the second mass, wherein the ion energy distribution having at least two peaks for the second type of ion, a first peak at lower energies than at least one peak for the first type of ion and a second peak at higher energies than the at least one peak for the first type of ion, the controlling the ion energy distribution is used to enhance the second peak of the second type of ion,
wherein the controlling the ion energy distribution allows for selectively controlling an etch impact of at least one of the first type of ion and the second type of ion.
7. The method of claim 6 , wherein the first type of ion is heavier than the second type of ion and the controlling the ion energy distribution provides for dominant etching by the second type of ion.
8. The method of claim 6 , wherein the first type of ion is heavier than the second type of ion and the controlling the ion energy distribution provides for dominant etching by the first type of ion.
9. The method of claim 6 , wherein the controlling occurs during plasma processing so that the ion energy distribution may change within a common gas phase of the plasma etching.
10. The method of claim 6 , wherein the plasma etching is an atomic layer etch process.
11. The method of claim 10 , wherein the controlling occurs during plasma processing so that the ion energy distribution may change within a common gas phase of the plasma etching.
12. The method of claim 10 , wherein the controlling the ion energy distribution is utilized to place the atomic layer etch process in a layer modification step.
13. The method of claim 12 , wherein the controlling occurs during plasma processing so that the ion energy distribution changes within a common gas phase of the plasma etching.
14. The method of claim 10 , wherein the controlling the ion energy distribution is utilized to place the atomic layer etch process in a layer etch step.
15. The method of claim 14 , wherein the controlling occurs during plasma processing so that the ion energy distribution changes within a common gas phase of the plasma etching.
16. A method for plasma etching a substrate, comprising:
providing a process chamber;
coupling one or more RF sources to the process chamber to provide RF power to the process chamber through at least a base frequency voltage at a base frequency and a second frequency voltage at a second frequency, the second frequency being a second harmonic frequency or higher of the base frequency;
providing at least a first type of ion and a second type of ion in the process chamber, the first type of ion having a first mass and the second type of ion having a second mass, the first mass being heavier than the second mass; and
controlling an ion energy distribution of the first type of ion and the second type of ion by adjusting a phase difference between the base frequency voltage and the second frequency voltage and/or an amplitude ratio of the base frequency voltage and the second frequency voltage, the ion energy distribution having at least two peaks for the second type of ion, a first peak at lower energies than at least one peak for the first type of ion and a second peak at higher energies than the at least one peak for the first type of ion, the controlling the ion energy distribution is used to enhance the second peak of the second type of ion,
wherein the controlling the ion energy distribution generates an asymmetrical ion energy distribution of at least one of the first type of ion or the second type of ion, and
wherein the asymmetrical ion energy distribution is used to adjusts an etch impact of the second type of ion relative to the first type of ion.
17. The method of 16 , wherein the plasma etching is atomic layer etching process and the controlling the ion energy distribution is utilized to switch the atomic layer etching process between a layer etch step and a layer modification step.
18. The method of claim 17 , wherein the controlling the ion energy distribution is performed within a same gas phase of the atomic layer etching process.