Light emitting device and method for manufacturing the same, and display device
The present disclosure provides a light emitting device and a method for manufacturing the same, and a display device, and relates to the field of display technology. The light emitting device includes: a light emitting unit; an encapsulating layer located on one side of the light emitting unit, wherein the encapsulating layer includes a reflective layer; an adhesive layer located on one side of the encapsulating layer away from the light emitting unit, wherein the adhesive layer includes an adhesive material; and a color filter layer located on one side of the adhesive layer away from the encapsulating layer, wherein the reflective layer is configured to reflect a light that cures the adhesive material.
1. A light emitting device, comprising:
a light emitting unit;
an encapsulating layer located on one side of the light emitting unit, wherein the encapsulating layer comprises a reflective layer;
an adhesive layer located on one side of the encapsulating layer away from the light emitting unit, wherein the adhesive layer comprises an adhesive material; and
a color filter layer located on one side of the adhesive layer away from the encapsulating layer,
wherein the reflective layer is configured to reflect a light that cures the adhesive material, and
wherein the encapsulating layer comprises a first barrier layer, a second barrier layer, and a buffer layer therebetween.
2. The light emitting device according to claim 1 , wherein the reflective layer comprises a distributed Bragg reflector.
3. The light emitting device according to claim 2 , wherein the distributed Bragg reflector comprises at least two stacks, each of which comprises a silicon oxide layer and a silicon nitride layer.
4. The light emitting device according to claim 3 , wherein the silicon nitride layer is located on one side of the silicon oxide layer away from the light emitting unit.
5. The light emitting device according to claim 4 , wherein the silicon nitride layer has a thickness greater than a thickness of the silicon oxide layer.
6. The light emitting device according to claim 5 , wherein a ratio of the thickness of the silicon nitride layer to the thickness of the silicon oxide layer is less than or equal to 1.3.
7. The light emitting device according to claim 5 , wherein:
the silicon oxide layer has a thickness of about 45 nm to about 55 nm;
the silicon nitride layer has a thickness of about 50 nm to about 60 nm.
8. The light emitting device according to claim 3 , wherein the distributed Bragg reflector comprises three stacks.
9. The light emitting device according to claim 1 , wherein the light comprises an ultraviolet light.
10. The light emitting device according to claim 1 , wherein one of the first barrier layer, the second barrier layer, and the buffer layer is located at a same layer as the reflective layer.
11. The light emitting device according to claim 10 , wherein one of the first barrier layer and the second barrier layer is located in the same layer as the reflective layer.
12. The light emitting device according to claim 1 , wherein any one of the first barrier layer, the second barrier layer, and the buffer layer is located at a different layer from the reflective layer.
13. The light emitting device according to claim 1 , wherein:
a material of each of the first barrier layer and the second barrier layer comprises an inorganic material; and
a material of the buffer layer comprises an organic material.
14. The light emitting device according to claim 1 , wherein the light emitting unit comprises a first electrode, a second electrode, and a light emitting layer therebetween.
15. The light emitting device according to claim 1 , wherein the adhesive material comprises glue.
16. The light emitting device according to claim 1 , further comprising:
a protective layer located on one side of the color filter layer away from the adhesive layer.
17. A display device, comprising the light emitting device according to claim 1 .
18. A method for manufacturing a light emitting device, comprising:
forming an encapsulating layer on one side of a light emitting unit, wherein the encapsulating layer comprises a reflective layer;
forming an adhesive material on one side of the encapsulating layer away from the light emitting unit;
curing the adhesive material by a light to form an adhesive layer, wherein the reflective layer is configured to reflect the light; and
forming a color filter layer on one side of the adhesive layer away from the encapsulating layer,
wherein the encapsulating layer comprises a first barrier layer, a second barrier layer, and a buffer layer therebetween.
19. The method according to claim 18 , wherein the light comprises an ultraviolet light.