Multistate magnetic memory element using metamagnetic materials

1. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising:

a layer of a metamagnetic material;

a layer of a nonmagnetic material on the layer of a metamagnetic material;

a layer of a ferromagnetic material on the layer of a nonmagnetic material; and

an electronic memory logic element with four stable resistance states;

wherein the electronic memory logic element with four stable resistance states comprises states which depend on two physical domains;

wherein the two physical domains comprise temperature sweep direction and magnetic field;

wherein the electronic memory logic element with four stable resistance states comprises FeRh;

wherein the FeRh undergoes a magnetic phase change with temperature cycling and comprises an associated hysteresis; and

wherein the 4 stable resistance states are obtained at a fixed temperature and zero magnetic field.

2. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 1 wherein the layer of a metamagnetic material comprises FeRh.

3. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 2 wherein the layer of a nonmagnetic material on the layer of a metamagnetic material comprises a nonmagnetic metal.

4. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 3 wherein the nonmagnetic metal comprises Cu.

5. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 4 wherein the layer of a ferromagnetic material on the layer of a nonmagnetic material comprises NiFe.

6. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 5 further comprising a MgO substrate or a sapphire substrate.

7. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 6

wherein the layer of FeRh is 30 nm thick;

wherein the layer of Cu is 5 nm thick; and

wherein the layer of NiFe is 30 nm thick.

8. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising:

an electronic memory logic element with four stable resistance states;

wherein the electronic memory logic element with four stable resistance states comprises states which depend on two physical domains;

wherein the two physical domains comprise temperature sweep direction and magnetic field;

wherein the electronic memory logic element with four stable resistance states comprises FeRh;

wherein the FeRh undergoes a magnetic phase change with temperature cycling and comprises an associated hysteresis; and

wherein the 4 stable resistance states are obtained at a fixed temperature and zero magnetic field.

9. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 8 wherein the electronic memory logic element with four stable resistance states comprises two magnetic layers and wherein the two magnetic layers are separated by a nonmagnetic layer.

10. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 9

wherein one of the magnetic layers comprises FeRh; and

wherein the nonmagnetic layer comprises a metal or a tunnel-barrier.

11. The metamagnetic tunneling-based spin valve device for multistate magnetic memory of claim 8

wherein the four stable resistance states are individually addressable with temperature cycling and magnetic field cycling;

wherein the resistance depends on the relative magnetization of magnetic layers; and

wherein the metamagnetic tunneling-based spin valve device for multistate magnetic memory is used for nonvolatile electronics.